s9014 low power npn transistor

Brand Name:Coolmay

Model Number:QM3G-100FH-60MT

Place of Origin:Shenzhen

HMI PLC All In One Low Level NPN Transistor Output Single Phase Max 16AI 8AO Precautions for PLC programming The PLC is compatible with GX Developer8.86/GX ...

Brand Name:Standar

Model Number:AS1360-33-T

Place of Origin:Malaysia

1.5uA Low Power Mosfet Transistor AS1360-33-T Positive Voltage Regulator AS1360 1.5µA Low-Power, Positive Voltage Regulator 1 General Description The AS1360 low-power, positive voltage regulator was designed to deliver up to 250mA while consuming onl...

Brand Name:Hua Xuan Yang

Model Number:AOD444

Place of Origin:ShenZhen China

AOD442G 60V N-Channel MOSFET General Description The AOD444/AOI444 combine advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . Those devices are suitable for use in PWM, load switching and general purpose ...

Brand Name:Infineon Technologies

Model Number:BSC060N10NS3G

Place of Origin:original

BSC060N10NS3G MOSFET Power Electronics High-Performance Low-Power Consumption Transistor for Industrial Applications IRF6217TRPBF - N-Channel MOSFET Transistor Parameters: VDS (Max) = 100V VGS (Max) = ±20V ID (Max) = 7.8A RDS (on) (Max) = 0.068Ω Package ...

Brand Name:Standar

Model Number:AS1360-33-T

Place of Origin:Malaysia

1.5uA Low Power Mosfet Transistor AS1360-33-T Positive Voltage Regulator AS1360 1.5µA Low-Power, Positive Voltage Regulator 1 General Description The AS1360 low-power, positive voltage regulator was designed to deliver up to 250mA while consuming onl...

Place of Origin:CN

Brand Name:Original Factory

Model Number:FB50R07W2E3C36

... Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer satisfaction rate: 99.9% !! [Company profile] Shenzhen Mingjiada Electronics Co., Ltd. is an authorized ...

Model Number:2SA683

Place of Origin:United States

Brand Name:Original

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Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Low Voltage MOSFET Trench Process Wireless Charging High EAS Capability *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas...

Place of Origin:US

Brand Name:Original

Model Number:2N3904

...t Status Obsolete Transistor Type NPN Current - Collector (Ic) (Max) 800mA Voltage - Collector Emitter Breakdown (Max) 30V Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V Power - Max 500mW Mounting...

Brand Name:Huixin

Model Number:MMDT3946DW SOT-363

Place of Origin:China

... Planar Die Construction Ideal for Low Power Amplification and Switching MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage ...

Place of Origin:/

Brand Name:ST

Model Number:MJD31CT4

... Applications ■ General purpose switching and amplifier transistor ​ Transistor Type NPN Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, ...

Brand Name:Toshiba

Model Number:2SC5200

Place of Origin:Original

...NPN Transistor 230V 15A 150W Mosfet Bipolar Transistor Power Amplifier Applications • High breakdown voltage: VCEO = 230 V (min) • Complementary to 2SA1943 • Suitable for use in 100-W high fidelity audio amplifier’s output stage Applications • power amplification Date Sheet Product Attribute Attribute Value Product Category: Bipolar Transistors - BJT Mounting Style: Through Hole Package / Case: TO-3P-3 Transistor Polarity: NPN

Brand Name:ROHM

Model Number:2SD1781KT146R

Place of Origin:China

...NPN Transistor with High hFE 120-240 625mW Power Low Noise Built-in Diode SOT-89-3 Package Halogen-Free Tape andamp; Reel Packaging andnbsp; Features 1)Very low VCE(sat). VCE(sat)=0.1V(Typ.) (IC/IB=500mA/50mA) 2)Higt current capacity in compact package. 3)Complements the 2SB1197K. andnbsp; Applications Power...

Brand Name:FUJI

Model Number:6DI30A-120

Place of Origin:JAPAN

...NPN PNP Transistors 30A, 1200V, 6 CHANNEL, NPN, Si, POWER TRANSISTOR Electrical Characteristics Collector Current-Max (IC) 30A Collector-emitter Voltage-Max 1200V Configuration COMPLEX DC Current Gain-Min (hFE) 70A Fall Time-Max (tf) 3000 JESD-30 Code R-PUFM-X17 Number of Elements 6 Number of Terminals 17 Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR Package Style FLANGE MOUNT Polarity/Channel Type NPN Power...

Brand Name:FLEXEM

Model Number:FL2N-40MR-4ADDA

Place of Origin:Shenzhen

.... * Digital Output: 16 NPN transistor power output x16, or PNP transistor power output x16, or transistor power output x8+relay outputx8. Specification: Digital Input 24 High-level input x4,general input x20,...

Brand Name:onsemi

Model Number:MJD122T4G

Place of Origin:USA

...- Base Voltage VCBO: 100 V Maximum DC Collector Current: 8 A Maximum Collector Cut-off Current: 10 uA Pd - Power Dissipation: 20 W Mounting Style: SMD/SMT Package / Case: TO-252-3

Brand Name:original

Model Number:LP2301BLT1G

...NPN Transistor PNP SOT-23(SOT-23-3) LP2301BLT1G Products Description: 1.MOS (Field Effect Transistor)/LP2301BLT1G Diodes and Rectifiers 2.the material of product compliance withRoHS requirements and Halogen Free 3.S- prefix for automotive and other applications requiringunique site and control change requirements; AEC-Q101qualified and PPAP capable 4.RDS(ON),VGS@-2.5V,IDS@-2.0A=150mΩ 5.RDS(ON),VGS@-4.5V,IDS@-2.8A=110mΩ 6.Power

Brand Name:Texas Instruments

Model Number:TPS62141RGTR

Place of Origin:N/S

NPN PNP Transistor Texas Instruments/TI TPS62141RGTR Vin (Min) (V) 3 Vin (Max) (V) 17 Vout (Min) (V) 1.8 Vout (Max) (V) 1.8 Iout (Max) (A) 2 Iq (Typ) (uA) 17 Switching frequency (Min) (kHz) 1250 Switching frequency (Max) (kHz) 2500 Features Enable, Light Load Efficiency, Output Discharge, Power...

Brand Name:Mitsubishi Electric Semiconductor

Model Number:2SC1971

Place of Origin:CHINA

2SC1971 C1971 TO220 NPN epitaxial planar type transistor designed for RF power amplifiers Description: silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. List Of Other Electronic Components...

Brand Name:Original Factory

Model Number:IMBG65R107M1HXTMA1

Place of Origin:China

... Input Capacitance (Ciss) (Max) @ Vds 496 pF @ 400 V Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~