rf transistor amplifier design

Brand Name:VBE

Model Number:VBE80R6H

Place of Origin:CHINA

Model Number:2SC2757 T33

...RF transistor is designed for low noise and high current-gain bandwidth product applications. It is suitable for use in VHF RF amplifiers, local oscillators, and mixers. The device features a compact SOT-23 package. Product Attributes Product Type: NPN RF Transistors...

Brand Name:TeXin

Model Number:TX-50W

Place of Origin:Shenzhen China

.... With support for multiple frequency bands over 1000MHz bandwidth. Equipped with high power transistors circuits, this amplifier is capable of delivering a maximum output power of 50W, ensuring strong and reliable signal amplification for your projects.

Brand Name:Anterwell

Model Number:2SC1972

Place of Origin:original factory

NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972 DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1972 in ...

Brand Name:INNOTION

Model Number:YP801241T

Place of Origin:Jiangsu, China

...RF Amplifier Transistor Innotion’s YP801241T is a 12-watt, pre-matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 8500MHz. The transistor...

Brand Name:Diodes Incorporated

Model Number:BS816A-1

Place of Origin:USA

...TRANSISTOR RF Transistors Manufacturer: DIODES Product Category: P-CHANNEL ENHANCEMENT RoHS: Details Mounting Style: - Package / Case: 16NSOP Packaging: Standard Unit Weight: - oz This transistor is suitable for RF power amplifiers in various applications such as wireless communication, broadcasting, and industrial RF equipment. ● P-channel enhancement mode ● DMOS transistor...

Brand Name:MYT

Model Number:1.2Ghz 30W anti drone module

Place of Origin:China

... options. Key Features Customizable frequency range: 300MHz - 6GHz Power output customization: 5W - 200W Advanced GaN transistor technology for enhanced efficiency Compact design for easy integration into anti-drone systems

Brand Name:Analog Devices Inc.

Model Number:AD9361BBCZ

Place of Origin:Multi-origin

...RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide gate voltage range and excellent thermal stability. It is ideal for applications such as RF power amplifiers...

Brand Name:Mitsubishi Electric Semiconductor

Model Number:2SC1971

Place of Origin:CHINA

2SC1971 C1971 TO220 NPN epitaxial planar type transistor designed for RF power amplifiers Description: silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. List Of Other Electronic Components...

Place of Origin:Freescale Semiconductor

Brand Name:Motorola

Model Number:MHW903

...RF POWER AMPLIFIERS Description: . . . designed specifically for the Pan European digital 2.0 watt, GSM hand–held radio. The MHW903, MHW953 and MHW954 are capable of wide power range control, operate from a 7.2 volt supply and require 1.0 mW (MHW903 / 953) or 100 mW (MHW954) of RF input power. • Specified 7.2 Volt Characteristics: RF...

Model Number:PA1268T1624M 10W-28V

Place of Origin:China

Brand Name:MXT

RF Power Amplifier 40dBm SMA/N CW Signal Product Description: RF Power Amplifier The RF Power Amplifier is designed for high power radio applications. It offers excellent gain 40dB, and input power from 0dBm to 10dBm. The supply current is 2500mA, and the package type is available as either surface mount or through hole. This high power radio amplifier...

Place of Origin:CN

Brand Name:Original Factory

Model Number:E047 Mosfet Transistor TO247 IRFP064NPBF

...Transistor TO247 IRFP064NPBF P3 LED Module Transistor Amplifier Parts Transistors [Who we are?] Shenzhen QINGFENGYUAN Technology Co., Ltd established in 2013, is a leading distributor of electronic components, including analog, digital, and RF integrated circuits, widely used in aerospace, military, medical, automotive, and consumer electronics. We offer product sourcing, design...

Brand Name:SWT

Model Number:SW-PA-40KHz-48C

Place of Origin:China

...amplify radio frequency (RF) signals within the 40 kilohertz (KHz) frequency range, with a saturated output power (PSat) of 48 dBm. Frequency Range: This power amplifier is specifically designed to amplify signals within the 40 KHz frequency range. Such a

Brand Name:Hincn

Model Number:HCTD-4055-2

Place of Origin:China

..., no damage to the power amplifier even during open circuit or short circuit. Specifications Model number: HCTD-4055-2 Product name: TDD 2*2W Dual Channel Digital Linear RF Power Amplifier 1420～1530M MIMO PA High linearity Number of channels: 2

Brand Name:Kimpok Technology / OEM

Model Number:KP-LAM800-25W

Place of Origin:China

High Power Linear RF Power Amplifier 25 Watt Support 868Mhz / 915Mhz ​Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28V,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA-...

Brand Name:Ding Shen

Model Number:DS-LAM800-25W

Place of Origin:China

High Power Linear RF Power Amplifier 25 Watt Support 868Mhz / 915Mhz ​Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28V,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA-...

Brand Name:OEM

Model Number:PA700MHz-2W

Place of Origin:China

2W COFDM RF Power Amplifier for Long Range Drone UAV Video Link 12-18VDC Introduction The PA700MHz-2W is a 2 watts COFDM power amplifier specially designed for UAV video transmission, it features small size and light weight, and supports 690-710MHz ...

Brand Name:SHINHOM

Model Number:RFPA Power amplifier

Place of Origin:China

RF Power Amplifier Module for High Power and Wideband Signal Transmission The RF Power Amplifier Module is engineered for high-performance signal amplification in RF and microwave systems. It delivers high output power, stable gain, and efficient operation, making it suitable for applications requiring reliable signal transmission over wide frequency ranges. Designed with a compact structure and robust performance, this amplifier...

Place of Origin:CHINA

Brand Name:EST

Model Number:LTE20W-B1

...RF Power Amplifier Module 80x50x16mm for LTE/NR Frequency Product Description: The latest Power Amplifier Module from our company has superior performance, offering 40dBm of gain (depending on different models), a working current of ≤0.8A, an input/output VSWR of ≤1.5, and a passband ripple of ≤2.0dB. Its compact size of 80x50x16mm makes it ideal for space-constrained applications. This digital power amplifier module is designed for RF

Place of Origin:China

Brand Name:OEM

...-40°C. 2.This document stipulates the radio frequency and monitoring technical indicators of the 1.2G 50W power amplifier module, the definition of each port of the module, the appearance and structure of the module, etc. 3.This document applies to all