rf power transistors high output

Brand Name:Analog Devices Inc.

Model Number:ADF5901WCCPZ

Place of Origin:Multi-origin

... • High Gain: 17.9dB @ 2.5GHz • High Efficiency: > 65% @ 2.5GHz • Low Quiescent Current: <100mA • RoHS Compliant • Package: 46-lead, 4mm x 6mm LFCSP Why ...

Place of Origin:PHILIPPINE

Brand Name:MOT

Model Number:MRF5177

...30W, 400MHZ RF POWER TRANSISTOR NPN SILICON Description: …designed for VHK/UHF power amplifier applications.This device is optimized for rugged performance in 225-400MHz communications equipment. Applications: Performance @400MHz,28Vdc-Power Output=30W(...

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　

Brand Name:Semelab / TT Electronics

Model Number:D2085UK

Place of Origin:UK

...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power

Brand Name:INNOTION

Model Number:YP01401650T

Place of Origin:Jiangsu, China

...High Electron Mobility GAN RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor is supplied in a ceramic /metal flange package. Votage 28V Pout 50W Features: High

Brand Name:SWT

Model Number:SW-PA-57005900-50C

Place of Origin:China

...High Power Output 100W RF Power Amplifier Highly Efficient Device for Modern Satellite Communication Needs Product Description Product Overview The 5700-5900MHz 100W RF Power Amplifier is a highly efficient and stable RF amplifier, which is mainly used in wireless communication, radar system and satellite communication applications. With excellent gain and power output, this product can meet the demand for high...

Brand Name:VBE

Model Number:VBE36015E2

Place of Origin:CHINA

Brand Name:Original brand

Model Number:STWA65N60DM6

Place of Origin:Original

...Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely high dv/dt • Optimized body diode recovery phase • Optimized softness APPLICATIONS • Charging stations for electric vehicles • LED lighting • Telecom • Servers • Solar inverters BENEFITS • Extremely high...

Brand Name:Hua Xuan Yang

Model Number:15P03C2

Place of Origin:ShenZhen China

...Power Transistor High Rugged Avalanche Mosfet Power Transistor Description -30V/-60A R DS(ON) = 4.8mΩ(typ.) @V GS =-10V R DS(ON) = 6.8mΩ(typ.) @V GS =-4.5V Reliable and Rugged Halogen Free Devices Available (RoHS Compliant) Mosfet Power Transistor Applications High Frequency Point-of-Load Synchronous Buck Converter Networking DC-DC Power System Power...

Brand Name:Texas Instruments

Model Number:PD85035S-E

Place of Origin:Malaysia

PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates...

Brand Name:NXP

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Place of Origin:CN

Brand Name:Original Factory

Model Number:CGH40025P

CGH40025P GaN IC 25W RF Power GaN High Electron Mobility Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, ...

Brand Name:STMICROELECTRONICS

Model Number:TIP3055

Place of Origin:Original

...Power Transistors high power mosfet transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier Description The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power...

Brand Name:Kimpok Technology / OEM

Model Number:KP-LAM800-50W

Place of Origin:China

...High Power RF Power Amplifier 50dBm Gain LAN 2kg Weight ​Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA-Circuit We can provide appropriate radiator to you, one radiator can be installed 2 50W-Jammer-Module. Parameters: Frequency Range 500-2400MHz Gain ≥50dB Small Signal Gain Flatness ≤4dB Power...

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Brand Name:Keysight/Agilent/HP

Model Number:Agilent N1913A

The pre-owned Agilent N1913A condenses a 1 ppm OCXO time-base, fast 400 rdg/s digitiser and sensor interface into a single-channel bench meter that reads average RF power from 9 kHz to 110 GHz over a wide –70 dBm to +44 dBm span. LAN, USB and GPIB make it ...

Brand Name:NENGXUN

Model Number:NX-PA1800-2700

Place of Origin:China

...RF Power Amplifier – High-Integration Device for EMC Testing & Signal Amplification Product Description This PA1800-2700MHz 100W RF Power Amplifier is engineered for professional signal amplification, combining high performance with robust functionality. Key Features High Integration: Compact structure ensures seamless integration into various systems. Testing Capability: Supports power...

Brand Name:Forimi

Model Number:FMV-I

Place of Origin:China

...high frequency RF power supply,high performance,distinct result, Spider Vein Removal Machine Padel switch for better and convenient operating experience(foot on:operating,foot off,stopping). Medical pen for treatment,with rotary connector. A pack of needles(Diameter:0.01mm). Output frequency testing. Working principle The micro-dots high-frequency produces a 30MHz ultra high...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:2N5401

TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ Low Current Ÿ High Voltage ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 2N5401...

Brand Name:yifeng

Place of Origin:China

... a power of 2.2 KW and can process up to 150-200 Kg/h of rice. It has a voltage of 220V/380V and comes with a 1-year warranty. The Mini Rice Mill is perfect for small-scale rice processing and is renowned for its high efficiency and ease of use. The