power switch transistor

Brand Name:Hua Xuan Yang

Model Number:G170C03LR1S

Place of Origin:ShenZhen China

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ

Brand Name:Hua Xuan Yang

Model Number:G170C03LR1S

Place of Origin:ShenZhen China

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ

Brand Name:STMicroelectronics

Model Number:STW25N80K5

Place of Origin:Original Factory

...Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages Applications • Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power...

Brand Name:FUJI

Model Number:6DI30A-120

Place of Origin:JAPAN

...Transistors 30A, 1200V, 6 CHANNEL, NPN, Si, POWER TRANSISTOR Electrical Characteristics Collector Current-Max (IC) 30A Collector-emitter Voltage-Max 1200V Configuration COMPLEX DC Current Gain-Min (hFE) 70A Fall Time-Max (tf) 3000 JESD-30 Code R-PUFM-X17 Number of Elements 6 Number of Terminals 17 Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR Package Style FLANGE MOUNT Polarity/Channel Type NPN Power...

Brand Name:Original

Model Number:Led diode

Place of Origin:Original

Pixel Rgb Rgbw Light Emitting Price 3 Pin Low Power Consumption Led Diode Part number ILED diode DC New year Datasheet Please contact me Package type Surface mount Application PCBA Whatsapp 86- 15102073750 Shipment: Payment term:

Brand Name:Ti

Model Number:FDMS6681Z

... Typical(Note 3) MSL1 Robust Package Design RoHS Compliant General Description The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and

Model Number:BT136-600D

Place of Origin:United States

Brand Name:Original

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Brand Name:Anterwell

Model Number:MJD112T4G

Place of Origin:original factory

... TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available •

Brand Name:Infineon Technologies

Model Number:IRFR1018ETRPBF

Place of Origin:Multi-origin

..., making it ideal for use in power supplies and other electronic devices. Low RDS(on): With a low on-resistance (RDS(on)) of just 10mOhms, this transistor offers low conduction losses and high efficiency. Robust Design: The IRFR1018ETRPBF features a

Brand Name:Infineon

Model Number:IRF9540NPBF

Place of Origin:Original Factory

...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in

Place of Origin:China

Brand Name:ONSEMI

Model Number:NUS5530MN

... in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has

Brand Name:FAIRCHILD/ONSEMI

Model Number:FDLL4148

Place of Origin:CHINA

... Diode Power Switching LL34 1N4148 MINI-MELF SOD80 Small Signal Diode The ll-34 glass-enclosed switching diode introduced by gaot has high stability and reliability, low reverse leakage current, switching speed less than 4.0ns, maximum power dissipation...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...Power IGBT High Power Insulated Gate Bipolar Transistor (IGBT) is a high voltage device used in many applications, such as on-board chargers, welding machines, switching power supplies, photovoltaic inverters, energy storage, and more. With a current density of 400A/cm² and a faster switching speed, High Power IGBT offers a reliable and efficient solution for these applications. High Power...

Brand Name:NuFiber

Model Number:NF-PSE5204F

Place of Origin:China

...Powered Switch 10/100M 4 POE Port 2 Uplink Port 6 Port Network Switch with Power Priority Mechanism Features 4*10/100Mbps PoE port; 2*10/100Mbps Uplink port Whole power budget: 120W Support 250 meters long distance 6KV lightning protection Specifications Product Active 4+2 100Mbps PoE Switch Model NF-PSE5204F Feature Modular Design, Stardard Size POE Port 1 to 4 support IEEE802.3AF/AT Standard Output Power...

Place of Origin:Original

Brand Name:Infineon Technologies

Model Number:IRG4PC30KDPBF

...Power Module Transistors IGBTs Single IRG4PC30KDPBF Specifications Part Status Active IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 28A Current - Collector Pulsed (Icm) 58A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 16A Power - Max 100W Switching...

Brand Name:Texas Instruments

Model Number:TPS62141RGTR

Place of Origin:N/S

...Transistor Texas Instruments/TI TPS62141RGTR Vin (Min) (V) 3 Vin (Max) (V) 17 Vout (Min) (V) 1.8 Vout (Max) (V) 1.8 Iout (Max) (A) 2 Iq (Typ) (uA) 17 Switching frequency (Min) (kHz) 1250 Switching frequency (Max) (kHz) 2500 Features Enable, Light Load Efficiency, Output Discharge, Power...

Place of Origin:PHILIPPINE

Brand Name:Toshiba Semiconductor

Model Number:MP6501A

... BUILT INTO IN 1 PACKAGE HIGH INPUT IMPENDANCE Applications: The Electrodes are is Isolated from Case 6 Darlington Transistor Built Into in 1 Package High Input Impendance High DCCurrent Gain: hFE = 100(Min.)(IC=15A) Low Saturation ...