power management isolated gate bipolar transistor

Brand Name:KRUNTER

Model Number:KUP40H12R4-7M

Place of Origin:CHINA

...Isolated Gate Bipolar Transistor Assembly The Ultimate Solution for Power Management Product Description: The Insulated Gate Bipolar Transistor Module, commonly known as IGBT Module, is a crucial component in electronic circuits, offering efficient power control and switching capabilities. This versatile module combines the features of an Insulated Gate Transistor...

Brand Name:Lite-On Inc.

Model Number:LTV-356T-D

Place of Origin:original

...Power Isolator IC Industry-Leading Insulated Gate Bipolar Transistor (IGBT) Driver Product: LTV-356T-D Power Isolator IC Features: • Maximum working voltage: 50V • Maximum output current: 1.5A • Operating temperature range: -40°C to +85°C • Lead-free and RoHS compliant • Low power...

Brand Name:Texas Instruments

Model Number:TCAN1042GDQ1

...Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage (V) -58 to 58 Signaling rate (Max) (Mbps) 5 TI functional safety category Functional Safety-Capable Rating Automotive Operating temperature range (C) -55 to 125 Low power...

Brand Name:Original

Model Number:SI8233BB-D-IS

Place of Origin:Original

...dc power supplies • Lighting control systems • Plasma displays • Solar and industrial inverters Safety Regulatory Approvals • UL 1577 recognized • Up to 5000 ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... excellent combination of low conduction losses, high switching frequency, high reliability, and high current density. High Power IGBT has a current density of 400A/cm2 and an application frequency of 60KHz. It also has a number of advantages, such as its

Brand Name:Infineon

Model Number:IKW40N120T2

Place of Origin:Original

... Product Category: IGBT Transistors Technology: Si Package / Case: TO-247-3 Collector- Emitter Voltage VCEO Max: 1.2 kV Collector-Emitter Saturation Voltage: 1.75 V Maximum Gate Emitter Voltage: - 20 V, + 20 V Continuous Collector Current at 25 C: 75 A

Brand Name:TOSHIBA

Model Number:GT20J101

Place of Origin:CHINA

... (sat) = 2.7 V (max) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES +-20 V Collector current DC IC 20 A Collector current 1 ms ICP 40 A Collector power dissipation (Tc = 25°C) PC 130 W

Brand Name:Anterwell

Model Number:GP4068D

Place of Origin:original factory

IRGP4068DPbF IRGP4068D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C • 5 µS ...

Model Number:MGW12N120D

Place of Origin:original factory

Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247 12 A @ 90°C 20 A @ 25°C 1200 VOLTS SHORT CIRCUIT RATED This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft ...

Brand Name:ABB

Model Number:FS450R17KE3/AGDR-71C S

Place of Origin:SWEDEN

...DCS INSULATED GATE BIPOLAR TRANSISTOR MODULE Technical Application *Decentralized control system *Turbine control, monitoring and protection system *Real-time information management and optimization system *Enterprise management information system *...

Brand Name:Texas Instruments

Model Number:TCAN1042GDQ1

Place of Origin:N/S

IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage (V) -58 to 58 Signaling rate (Max) (Mbps) 5 TI functional safety category Functional Safety-Capable Rating ...

Place of Origin:Original

Brand Name:Microsemi Corporation

Model Number:APT50GT60BRDQ2G

APT50GT60BRDQ2G IGBT Power Module Transistors IGBTs Single APT50GT60BRDQ2G Specifications Part Status Active IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 110A Current - Collector Pulsed (Icm) 150A Vce(on) (...

Brand Name:ZFeng

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Brand Name:Hua Xuan Yang

Model Number:50P03NF TO-252

Place of Origin:ShenZhen China

...Power Transistor For Load Switch Power Management Mosfet Power Transistor DESCRIPTION The 50P03NF uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as aload switch or in PWM applications. Mosfet Power Transistor...

Categories:Power Management ICs

Country/Region:china

... DC Switching Controllers Mfr onsemi Series - Package Tape & Reel (TR) Product Status Active Output Type Transistor Driver Function Step-Up, Step-Up/Step-Down Output Configuration Positive, Isolation Capable Topology Boost, Flyback Number of Outputs 1

Categories:IC Integrated Circuits

Country/Region:china

...: Details Brand: Analog Devices Moisture Sensitive: Yes Packaging: Reel Packaging: Cut Tape Product Type: Isolated Gate Drivers Series: ADUM4146 Factory Pack Quantity: 1000 Subcategory: PMIC - Power Management ICs Product Compliance USHTS: 8542390001 ECCN:

Brand Name:G-Tech

Model Number:GP33

Place of Origin:China

...Power Supply System, Three-phases In/ Three-phases Out Online UPS Online Low-frequency UPS Product Introduction GP33 series is online double conversion UPS, with Isolated Gate Bipolar Transistors(IGBT) that performs excellent conversion of sinewave output from high frequency PWM inverter. The series is applicalbe to small and medium-sized data centers, network management...

Brand Name:GE

Model Number:DS200IIBDG1ADA

Place of Origin:USA

...Gate Driver Board DS200 Series Gas Turbine Card in stock now Description GE DS200IIBDG1ADA has three major functions in terms of the greater overall drive assembly, including current feedback isolation, isolating motor terminal voltage, and protecting the assembly's gate drive for power insulated gate bipolar transistors...

Brand Name:Hua Xuan Yang

Model Number:4306W-A

Place of Origin:ShenZhen China

...Gate Charge Mosfet Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet Power

Brand Name:Fanuc

Model Number:1MBI400NA-120

Place of Origin:Japan

New Module 1MBI400NA-120 FUJI Module Original IGBT Power Module Part Category: Transistors Manufacturer: Fuji Electric Corp. of America Description: Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channe fuji a50l-0001-0327, a50l-0001-0327 ...