low power rf amplifier

Brand Name:VBE

Model Number:VBP2GL

Place of Origin:China

2GHz , S-Band , Low Noise Amplifier LNA , RF Power Amplifier Module VBE RF Power Amplifier Module Introductions: VBE provide solutions of RF modules including radio frequency signal source,radio frequency power amplifier(PA),low noise amplifier(LNA), Radio...

Model Number:AD620ARZ

Place of Origin:original factory

Low Cost Low Power Instrumentation Amplifier AD620 FEATURES Easy to use Gain set with one external resistor (Gain range 1 to 10,000) Wide power supply range (±2.3 V to ±18 V) Higher performance than 3 op amp IA designs Available in 8-lead DIP and SOIC packaging Low power...

Brand Name:Kimpok Technology / OEM

Model Number:KP-LAM800-50W

Place of Origin:China

500Mhz - 2400MHz High Power RF Power Amplifier Smaller Size LAN 28V DC ​Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA...

Place of Origin:CN

Brand Name:Original Factory

Model Number:HMC591LP5ETR

... Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer satisfaction rate: 99.9% !! [Company profile] Shenzhen Mingjiada Electronics Co., Ltd. is an authorized ...

Place of Origin:Jiangsu, China

Brand Name:SZHUASHI

Model Number:YP3630W

... power driver amplifier using an advanced InGaP/GaAs HBT process. This amplifier provides 31.67dB gain and 31.2dBm P1dB at 2GHz while drawing 940mA current from a 5V typical bias condition. The ...

Brand Name:TX TELSIG

Model Number:TX-GK

Place of Origin:China

... output power, good in-band flatness and the small offset between upper and lower side band. ( No signal source version is offered too ) Product Feature High output power each channel about 5W, total output 35W Each channel has its own single RF jamming ...

Brand Name:HY

Model Number:A0181

Place of Origin:Shenzhen, China

..., convenient and practical, fashion portable. The Bluetooth 4.0 anti-lender is based on the GB2540 module design. GB254X is a high-performance, ultra-low power consumption (Bluetooth Low Energy)

Place of Origin:PHILIPPINE

Brand Name:Texas Instruments

Model Number:CC2500RTKR

... is intended for the ISM (Industrial, Scientific and Medical) and SRD (Short Range Device) frequency band at 2400-2483.5 MHz. The RF transceiver is integrated with a highly configurable baseband modem. The modem supports various modulation formats and

Brand Name:Sierra wireless

Model Number:HL7618

Place of Origin:Germany

Low Power RF Module LTE 4G Module HL7618 with Cat 1 Air Interface andnbsp; Region: Primarily for North America andnbsp; andnbsp; ...

Model Number:LDSK-TZ-KGAN-100w

Brand Name:LDSK

Place of Origin:Guangdong, China

... of advanced technology. Our company is located in the vibrant city of Shenzhen, known as a hub of innovation and technology in China. Our main products include RF module and anti FPV, which are designed with

Categories:RF Transceiver IC

Country/Region:china

IC RF TxRx Only General ISM < 1GHz 862Mhz ~ 1.02GHz 24-VQFN Exposed Pad

Brand Name:Yike

Model Number:TLV4314IPWR

Quick Details Model Number: TLV4314IPWR Type: integrated circuit Place of Origin: China Brand Name: Yike Description: IC CMOS 4 CIRCUIT 14TSSOP Voltage - Breakdown: - Frequency - Switching: - Power (Watts): - Operating Temperature: -40°C ~ 125°C, -40°C ~ ...

Model Number:MCP6004T-I/SL

Place of Origin:Malaysia

Brand Name:KAIGENG

MCP6004T-I/SL SOP614 Electronic Components IC MCU Microcontroller Integrated Circuits MCP6004T-I/SL #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;...

Brand Name:PTC

Model Number:A2GL

Place of Origin:Shenzhen China

... factor. With a VSWR of 1.5:1, an operating temperature range of -40ºC to +85ºC, and a weight of 100g, it is ideally suited for both indoor and outdoor applications. Output power ranges from 10 to 100W, and a SMA-F connector ensures a

Brand Name:JiZhong

Model Number:JZEDFA-XXdBIIIN

Place of Origin:China

19'' 1U Low Power Input/RF Signal Input Type 1550nm Fiber Amplifier EDFA JZEDFA-XXdBIIIN Main Features: • Adopt international famous brand low-noise pump laser, low anamorphose, wide frequency band and high output optical power; • Adopt imported high ...

Categories:RF Interconnects

Country/Region:china

... Current: 60 mA Gain: 24 dB NF - Noise Figure: 2.9 dB Type: Low Noise Amplifiers Mounting Style: SMD/SMT Package / Case: Y460 P1dB - Compression Point: 5 dBm OIP3 - Third Order Intercept: 14 ...

Brand Name:Original

Model Number:SZA5044Z

Place of Origin:Original

...Amplifiers RF Amplifier IRFHM9331TRPBF MSP430FR2100IPW16R Wireless RF Integrated Circuits Product Description RFMD’s SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low...

Place of Origin:China

Brand Name:OEM

...RF Power Amplifier Module with RS485 Communication for Anti Uav Specification 1.The power amplifier uses domestic core key components and can operate normally at low temperatures of -40°C. 2.This document stipulates the radio frequency and monitoring technical indicators of the 1.2G 50W power amplifier...

Place of Origin:shenzhen

Model Number:BT-PA3600DL-5W-2B

RF Power Amplifier Modules 5W 3600MHz A compact RF power amplifier module designed for wireless communication equipment, delivering at least 5W output power across 3400–3800MHz with 40dB gain. Frequency Range 3400–3800MHz Output Power ≥37dBm (5W min) Gain 40±1dB Power Supply 28±1V DC Product Overview The BT-PA3600DL-5W-2B is an RF power amplifier...

Brand Name:Hincn

Model Number:HCTD6090-100

Place of Origin:China

... Dual power supply voltage: 24~32V, 12~18V (built-in 12V low-dropout voltage regulator) Working current 0.8~1A@12.5~18V, 8.0~12A@24~32V Output Power ≥100W Transmitting Gain ≥25 ± 1dB (10~50dB can be customized) Flatness In Band ≤ ±0