low power mosfet switch

Brand Name:ROHM

Model Number:2SB1316TL

Place of Origin:Original

2SB1316TL Power Transistor low power mosfet switching power mosfet] Features 1) DarliCM GROUPon connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980. Packaging ...

Brand Name:GradeX

Model Number:DHT01-0812A

Place of Origin:Hefei China

Description Precision Walnut Kernel Sorting Equipment with Compact 4 Lane Design This precision walnut kernel sorting equipment brings professional grading to smaller facilities with its compact 4-lane layout. Running on just 6.45 kW, it keeps your ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:PSS20S71F6

... Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer satisfaction rate: 99.9% !! [Company profile] Shenzhen Mingjiada Electronics Co., Ltd. is an authorized ...

Brand Name:HT

Model Number:F4N65L TO-220F-3L

Place of Origin:China

...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power

Place of Origin:PHILIPPINE

Brand Name:Fuji Electric

Model Number:FMH23N50E

...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Specifications: part no

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

...Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages z Low RDS (on) z Rated for unclamped Inductive load switching...

Brand Name:Hua Xuan Yang

Model Number:10N60

Place of Origin:ShenZhen China

...POWER MOSFET DESCRIPTION The UTC 10N60K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. FEATURES RDS(ON) < 1.0 Ω @ VGS = 10 V, ID = 5.0 A * Fast switching...

Brand Name:JUYI

Model Number:JY09M TO 252

Place of Origin:China

... the high cell density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. FEATURES ●

Brand Name:STMicroelectronics

Model Number:STP15810

Place of Origin:Shenzhen, China

... also reducing internal capacitance and gate charge for faster and more efficient switching. Features : 100% avalanche tested Ultra low on-resistance Distinctive Characteristics : Part No: STP15810 Description: N Channel Power MOSFET Rad Hardened: No

Brand Name:Huixin

Model Number:BC2301

Place of Origin:China

SOT-23 Plastic-Encapsulate MOSFETS BC2301 P-Channel 20-V(D-S) MOSFET BC2301 SOT-23 Datasheet.pdf FEATURES TrenchFET Power MOSFET MARKING: 2301 APPLICATIONS Load Switch for Portable Devices DC/DC Converter Maximum ratings (Ta=25℃ unless otherwise noted) ...

Brand Name:STMicroelectronics

Model Number:STF28NM50N

Place of Origin:China

...Power MOSFET 500V/28A Rating Low 0.135andOmega; Rds(on) Fast Switching Avalanche Rugged Eco-Mode Low Gate Charge TO-220FP Package RoHS Certified for SMPS andamp; Motor Drives andnbsp; Features andbull; 100% avalanche tested andbull; Low input capacitance and gate charge andbull; Low gate input resistance andnbsp; Applications andbull; Switching applications andnbsp; Description These devices are N-channel Power MOSFETs...

Brand Name:AEROSEMI

Model Number:MT9700

Place of Origin:CN

...Power-Distribution Switch The MT9700 is an 80mΩ adjustable fast response current-limited power-distribution switch designed for high-performance power management applications. Product Features Compliant to USB Specifications Integrated 80mΩ Power MOSFET Low Supply Current: 15μA Typical at Switch On State, 1μA Typical at Switch...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:HXY9926A

...le retaining a 12V VGS(MAX) rating. This device is suitable for use as a unidirectional or bi-directional load switch. Product Summary Absolute Maximum Ratings T =25°C unless otherwise noted Electrical Characteristics (T =25°C unless otherwise noted) A.

Brand Name:JUYI

Model Number:JY21L

Place of Origin:China

...IGBT driver based on P-SUB P-EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 150V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The

Brand Name:UCHI

Model Number:HT7550 7530

Place of Origin:Dongguan China

...Low Power LDO​ Features ● Low power consumption ● Low voltage drop ● Low temperature coefficient ● High input voltage (up to 24V) ● Related product model: HT7536-1,HT7550-1,HT7536-1,HT7533-1,HT7530-1... ● High output current : 100mA (Pd 250mW) ● Output voltage accuracy: tolerance 3% ● TO-92, SOT-89 and SOT-25 package Applications ● Battery powered...

Brand Name:IR Original

Model Number:IR21094STRPBF

Place of Origin:Original & New

IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS...

Brand Name:Original Factory

Model Number:BSC004NE2LS5ATMA1

Place of Origin:China

...Integrated Circuits Chip N Channel Power MOSFET Product Description Benchmark switching performance (minimum quality factor RDS(on) x Qg and RDS(on) x Qgd) Specific components optimized for toroidal circuits to provide low RDS(on) Parts with integrated ...