low junction capacitance voltage igbt

Brand Name:Lingxun

Place of Origin:China

Product Description: The High Power Semiconductor is particularly useful in charging pile applications for electric vehicles, where high voltage power IGBT is required for efficient energy transfer. With its high efficiency, the High Power Semiconductor...

Model Number:G12180-010A

Place of Origin:Japan

... (Typical) 1.55 μm Light sensitivity (typical) 1.1 A/W Dark current (max) 4 nA Cut-off Frequency (typical) 60 MHz Junction Capacitance (typical) 55 pF Noise equivalent power (typical) 1.4×10-14 W/Hz1/2 Sensitivity wavelength range 0.9 to 1.7 μm

Model Number:H11L1M Onsemi DIP 6

Brand Name:Original

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Brand Name:XIWUER

Model Number:EVY-10KV-P60/25

Place of Origin:XIAN,CHINA

Wireless Temperature Measuring Device for Ring Network Cabinet Introduction In the power system, the temperature of the electrical junction is an important parameter that expresses the normal operation of the primary equipment. Especially for the breaking ...

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:IXSN35N120U1

...Voltage IGBT with Diode Description: VCES = 1200 V IC25 = 70 A VCE(sat) = 4 V Applications: ● International standard package mini BLOC (ISOTOP) compatible ● Aluminium-nitride isolation - high power dissipation ● Isolation voltage 3000 V~ ● Low VCE(sat) - for minimum on-state conduction losses ● Fast RecoveryEpitaxial Diode - short trr and IRM ● Low collector-to-case capacitance(< 50 pF) - reducesd RFI ● Low...

Brand Name:Delta

Model Number:FRC

Place of Origin:China

...Voltage Divider for Pulse Hv Testing Introduction: FRC Capacitive Voltage Divider is one kind of universal high-voltage measuring instruments. It can be used in power systems, electrical appliances, electronic equipment manufacturing sector to measure AC high-voltage and DC high-voltage under the industrial frequency. FRC Capacitive Voltage Divider is made up of high-vlotage measuring part and low-voltage...

Brand Name:Anterwell

Model Number:P6KE15

Place of Origin:original factory

...Junction Transient Voltage Suppressor VOLTAGE - 6.8 TO 440 Volts 600Watt Peak Power 5.0 Watt Steady State FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-O Glass passivated chip junction in DO-15 package 600W surge capability at 1ms Excellent clamping capability Low...

Model Number:P6KE15

Place of Origin:original factory

...Junction Transient Voltage Suppressor VOLTAGE - 6.8 TO 440 Volts 600Watt Peak Power 5.0 Watt Steady State FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-O Glass passivated chip junction in DO-15 package 600W surge capability at 1ms Excellent clamping capability Low...

Brand Name:onsemi

Model Number:NTMFS4C029NT1G

Place of Origin:original

...) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18.6 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 987 pF @ 15 V FET Feature -

Brand Name:XUYANG

Model Number:BAT42

Place of Origin:China

...protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. · These diodes are also available in the MiniMELF case with type designation LL42 to LL43. · High temperature soldering guaranteed: 260℃/...

Brand Name:XZH TEST

Model Number:XHDP series

Place of Origin:China

XHDP series Model NO. XHDP Series Usage Digital Cable Tester Power Electricity Certification CE, ISO Customized Customized Color Black Transport Package Wooden Box Filled with Foam Inside Trademark XZH TEST Origin China Xi'an HS Code 9030390000 Production ...

Brand Name:Original Factory

Model Number:MSCSM120AM03CT6LIAG

Place of Origin:CN

..., ultra-low weight, and low junction to case thermal resistance. Specification Of MSCSM120AM03CT6LIAG Part Number MSCSM120AM03CT6LIAG Input Capacitance (Ciss) (Max) @ Vds 30200pF @ 1kV Power - Max 3.215kW (Tc) Operating Temperature -40°C ~ 175°C (TJ)

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Ultra Small Package Super Junction MOSFET with Ultra-low Junction Capacitance and Ultra Small Internal Resistance *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: ...

Brand Name:Infineon Technologies

Model Number:SPW35N60C3

... rated Extreme dv /dt rated Ultra low effective capacitances Improved transconductance Basic Data Product Attribute Attribute Value Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: ...

Brand Name:ST

Model Number:STGW60H65DFB

Place of Origin:Original Factory

...IGBT Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Positive VCE(sat) temperature coefficient • Low...

Brand Name:Shinhom

Model Number:GT series

Place of Origin:China

...IGBT​ , High Frequency Transformer Gate dirve transformers for IGBT need to ensure excebehavior as well as safe galvanic separation betweer voltage side Turns ratio: 1:1.2:1.2 Inductance: 1.4mH Typ.@100KHz Leakage inductance: 0.3uH Ref@100KHz Coupling capacitance: 12pF Pri to Sec Power: 3W FEATURES: Developed for 1200 V IGBT applications Low coupling capacitance...

Brand Name:Fairchild/ON

Model Number:FGH60N60SMD

Place of Origin:CN

... voltage: VCE(sat) =1.9V(Typ.) @ IC = 60A • High input impedance • Fast switching • Tighten Parameter Distribution • RoHS compliant Applications • Solar Inverter, UPS, SMPS, PFC • Induction Heating Using Novel Field Stop IGBT Technology,

Brand Name:Mitsubishi Electric

Model Number:CM400C1Y-24S 203G

Place of Origin:CHN

...IGBT MODULE S-SERIES AC SWITCH IGBT Module Manufacturer: Mitsubishi Electric Product Category: IGBT Modules RoHS: Details Brand: Mitsubishi Electric Product Type: IGBT Modules Subcategory: IGBTs Collector current IC .............….......................… 3 5 0 A Collector-emitter voltage VCES ......................… 1 2 0 0 V Maximum junction...

Brand Name:Toshiba

Model Number:MG200Q1US51

Place of Origin:Japan

...IGBT Power Module MG200Q1US51 Transistor Module MG200Q1US51 Product Description Manufactured by: Toshiba America, Inc. Part number: MG200Q1US51 Part Category: Transistors Description: 300A, 1200V, N-CHANNEL IGBT Collector-Emitter Voltage: 1200V Gate-Emitter Voltage: 20V Collector Current (DC): 300A Forward Current: (DC): 200A Collector Power Dissipation: 1500W Junction Temperature: 150C Isolation Voltage...