low junction capacitance semiconductor

Model Number:G12180-010A

Place of Origin:Japan

... (Typical) 1.55 μm Light sensitivity (typical) 1.1 A/W Dark current (max) 4 nA Cut-off Frequency (typical) 60 MHz Junction Capacitance (typical) 55 pF Noise equivalent power (typical) 1.4×10-14 W/Hz1/2 Sensitivity wavelength range 0.9 to 1.7 μm

Model Number:ABS20JG

Product Overview The ABS20JG thru ABS20MG are Ultrasoft Recovery Bridge Rectifiers designed for efficient power conversion. They offer reduced EMI, lower power loss, and reduced switching transistor stress due to their ultrasoft recovery characteristics, ...

Brand Name:onsemi

Model Number:NTMFS4C029NT1G

Place of Origin:original

...) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18.6 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 987 pF @ 15 V FET Feature -

Brand Name:AXNEW

Model Number:AXD-12PPC-V3C

Place of Origin:Shenzhen China

... Aspect ratio 4:3 Useful Screen Area 245.76 mm x 184.32mm Touch Panel Industrial Flat Projected Capacitive Screen with eeti chipset Touch response time 10ms (typical) Touch PC Dimensions 309.1x 247.5 x50.0

Place of Origin:CN

Brand Name:Original Factory

Model Number:BGSA149M2N10E6327XTSA1

... Communication Module BGSA149M2N10E6327XTSA1 Ultra Low OFF Capacitance Antenna Tuning SP4T MJD Advantage 15 years experience for electronic components Secure Ordering Excellent Feedback Delivery Date Guaranteed 100% Low Price Guaranteed Export to 108 ...

Brand Name:Onsemi

Model Number:1N4148WS

Place of Origin:China

1N4148WS High-Speed Switching Diode with 100V Rating 150mA Current Ultra-Low 2pF Capacitance 4ns Recovery SOD-323 Miniature Package AEC-Q101 Qualified for Automotive and General-Purpose Apps andnbsp; Features andbull;General Purpose Diodes andbull;Fast ...

Brand Name:SHINHOM

Model Number:gtx7045

Place of Origin:China

... for superior performance in demanding automotive environments, these transformers feature exceptionally low interwinding capacitance to minimize EMI and achieve high Common Mode Transient Immunity. As a robust Automotive Transformer solution, it meets AEC-Q200...

Brand Name:TJIN

Model Number:002

Place of Origin:China

Product Description: Semiconductor Molding Equipment Product Overview The Semiconductor Molding Equipment is a fully automatic molding system designed for the production of high-quality semiconductor products. This advanced equipment utilizes state-of-the-...

Brand Name:Dissmann

Model Number:HEV-H-Q

Place of Origin:China

Bolt Down Fuse Semiconductor Protection Fuse Low Current Fuse Material: Noumenon: Ceramic Pins: Copper alloy Product Presentation: Rated Voltage AC/DC500V or lower ...

Brand Name:Keysight Agilent

Model Number:85024A

Place of Origin:USA

Keysight Agilent 85024A High-Frequency Probe 300 kHz to 3 GHz Complete high-frequency probing without adversely loading the circuit under test. The Keysight Agilent 85024A High-Frequency Probe features an input capacitance of only 0.7 pF shunted by 1 ...

Brand Name:Janhoo

Model Number:JSA-BT525G35-PM

Place of Origin:TianJin

Janhoo Semiconductor Optical Amplifier 14pin Butterfly 1550nm High Saturation Power SOA Janhoo’s 1550nm PM Semiconductor Optical Amplifiers (SOAs) are used for optical amplification at 1550nm wavelength, which can significantly improve the output power. It...

Brand Name:WINNER

Model Number:MW001

Place of Origin:CHINA

High Quality 99.99% 4N Purity Fine Gold Wire for Scientific Research Material Gold Diameter 0.0125, 0.05, etc. mm Form Wire Purity ≥99.99% Gold wire has excellent electrical properties and low reactivity, making it ideal for applications that require ...

Model Number:4N25M Onsemi DIP6

Brand Name:Original

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Brand Name:Veolia

Model Number:E-Cell-3X

Place of Origin:France

​1. Product Overview: Veolia E-Cell-3X Electrodeionization (EDI) System​ The Veolia E-Cell-3X is a high-performance electrodeionization (EDI) system designed for continuous production of ultra-pure water in industrial and municipal water treatment ...

Brand Name:Littelfuse

Model Number:AQRV05-4HTG

Place of Origin:USA

... maximum 12A surge current per IEC 61000-4-5 (tP=8/20μs) without performance degradation and a minimum ±30kV ESD per IEC 61000-4-2. Their very low loading capacitance also makes them

Brand Name:HEWEI

Model Number:HW-24

Place of Origin:China

... signal is detected, the non-linear junction detector generates second and third harmonics.Semiconductor components will display higher grades on the 2nd harmonic.Corrosive semiconductor components will display higher grades on the 3rd harmonic.The

Brand Name:DEC

Model Number:OSPS6060CW-

Place of Origin:Jiangxi, China

... Barrier Diode (abbreviated SBD). SBD is not fabricated by the principle of forming a PN junction by contacting a P-type semiconductor with an N-type semiconductor, but by a metal-semiconductor junction principle formed by metal-to-semiconductor contact.

Brand Name:Uchi

Model Number:Schottky diodes

Place of Origin:Dongguan China

Low Power Loss High Efficiency Schottky Diode For High Frequency Switch Power Supply​ MBR10100.pdf The Schottky diode is named after its inventor, Dr. Schottky (Schottky), and SBD is the abbreviation of Schottky Barrier Diode (Schottky Barrier Diode, abbreviated as SBD). SBD is not made by the principle of contacting P-type semiconductor and N-type semiconductor to form PN junction, but by using the principle of metal-semiconductor junction

Brand Name:Upperbond

Model Number:Maker

Place of Origin:China

... are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. 1. Bipolar Junction Transistors The first bipolar junction transistors were