cghv37400f rf transistor

Brand Name:Diodes Incorporated

Model Number:BS816A-1

Place of Origin:USA

...TRANSISTOR RF Transistors Manufacturer: DIODES Product Category: P-CHANNEL ENHANCEMENT RoHS: Details Mounting Style: - Package / Case: 16NSOP Packaging: Standard Unit Weight: - oz This transistor is suitable for RF power amplifiers in various applications such as wireless communication, broadcasting, and industrial RF equipment. ● P-channel enhancement mode ● DMOS transistor...

Model Number:BFP420H6327

...RF Bipolar Transistor The BFP420 is a low noise, grounded emitter (SIEGET) silicon NPN RF bipolar transistor from Infineon's fourth generation RF transistor family. With a transition frequency fT of 25 GHz, it offers high gain and low current characteristics, making it suitable for oscillators up to 10 GHz. This device provides cost competitiveness and ease of use for various RF...

Brand Name:Analog Devices Inc.

Model Number:AD9361BBCZ

Place of Origin:Multi-origin

...RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide gate voltage range and excellent thermal stability. It is ideal for applications such as RF...

Brand Name:Fuji Electric

Model Number:FLM0910-25F

Place of Origin:JP

FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to ...

Model Number:BFQ67W

Place of Origin:CN

... to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.

Model Number:CGHV37400F

... to the data sheet, such as PDF files Docx documents, etc. We have CGHV37400F high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ...

Brand Name:VBE

Model Number:VBE36015E2

Place of Origin:CHINA

Model Number:BGH 182M E6327

... as a technical resource for engineers and product developers seeking to integrate Infineon's advanced semiconductor solutions into their designs. Product Categories Covered: RF Discretes (RF Transistor

Place of Origin:CN

Brand Name:Original Factory

Model Number:QPD0007

Wireless Communication Module QPD0007 Single-Path 5GHz 20W 48V GaN RF Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ...

Brand Name:Anterwell

Model Number:BFR91A

Place of Origin:original factory

Stock Offer (Hot Sell) Part no. Quantity Brand D/C Package EPM3128ATC100-10N 3000 ALTERA 16+ TQFP-100 HFA08TB60PBF 3000 VISHAY 16+ TO-220 HT7533-1 3000 HOLTEK 13+ SOT89 HT9170B 3000 HOLTEK 15+ DIP18 IMP811T 3000 IMP 16+ SOT143 IRF840PBF 3000 VISHAY 16+ ...

Model Number:SD1480

Place of Origin:Malaysia

Brand Name:KAIGENG

SD1480 N/A Electronic Components IC MCU Microcontroller Integrated Circuits SD1480 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Brand Name:original

Model Number:FCF06A40

Place of Origin:original

Product Category: Rectifiers Mounting Style: Through Hole Package / Case: TO-220-3 Vr - Reverse Voltage: 400 V If - Forward Current: 6 A Type: Fast Recovery Rectifiers Configuration: Single Max Surge Current: 60 A Ir - Reverse Current: 20 uA Recovery Time...

Brand Name:MITSUBISHI

Model Number:RA20H8087M

Place of Origin:JAPAN

Model Number:CGHV37400F

RF Mosfet 50 V 1 A 3.3GHz ~ 3.8GHz 14dB 525W 440217

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 50 V 1 A 3.3GHz ~ 3.8GHz 14dB 525W 440217

Brand Name:NXP

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Categories:FETs MOSFETs

Country/Region:china

RF Mosfet 50 V 1 A 3.3GHz ~ 3.8GHz 14dB 525W 440217

Brand Name:original

Model Number:M68702H

Place of Origin:Original Manufacturer

...RF POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor...

Place of Origin:MALAYSIA

Brand Name:FSL

Model Number:MRF374A

MRF374A is a RF POWER FIELD EFFECT TRANSISTOR. Part NO: MRF374A Brand: FSL Date Code: 286+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ...