bf245a fet transistor

Brand Name:Original Factory

Model Number:IPP65R050CFD7A

Place of Origin:CN

...220-3, Through Hole. Specification Of IPP65R050CFD7A Part Number IPP65R050CFD7A FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ ...

Model Number:BF245A

... sheet, such as PDF files Docx documents, etc. We have BF245A high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ...

Place of Origin:US

Brand Name:Original

Model Number:AOD478

Product Detail Packaging Cut Tape (CT) Part Status Discontinued at Digi-Key FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 2.5A (Ta), 11A (Tc) Drive Voltage (Max Rds On, Min Rds...

Model Number:MRF150

Place of Origin:Malaysia

Brand Name:KAIGENG

MRF150 N/A Electronic Components IC MCU Microcontroller Integrated Circuits MRF150 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Model Number:BF245A,112

RF Mosfet 15 V 100MHz TO-92-3

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet TO-92 (TO-226)

Brand Name:Onsemi

Model Number:FDV303N

Place of Origin:USA

FDV303N Digital FET N-Channel Onsemi RF Transistors Manufacturer: onsemi Product Category: MOSFETs RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source...

Brand Name:VBE

Model Number:VBE10R5

Place of Origin:CHINA

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRF1404ZPBF

... Hole TO-220AB Specification: Category Discrete Semiconductor Products 　 Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss)

Place of Origin:Taiwan

Brand Name:Motorola, Inc

Model Number:MRF136

Quick Detail: N-CHANNEL MOS BROADBAND RF POWER FETs Description: N-CHANNEL MOS BROADBAND RF POWER FETs designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. ...

Model Number:TP65H070G4LSGB-TR-CN

Product Overview The TP65H070G4LSGB-TR-CN series FETs are hybrid normally-off Gallium Nitride (GaN) field effect transistors designed for high-efficiency and high-frequency power applications. They offer the strongest gate and the lowest reverse voltage ...

Brand Name:NEXPERIA

Model Number:NX7002AK

Place of Origin:CHINA

NX7002AK NEXPERIA N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted D Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Active SVHC Yes Automotive No PPAP No Product Category ...

Model Number:SMP3003-DL-1E

Place of Origin:onsemi

... FETs, MOSFETs Mfr onsemi Series - Package Tape & Reel (TR) Cut Tape (CT) Digi-Reel® Product Status Obsolete FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75 V Current - Continuous Drain (Id)

Brand Name:ST brand

Model Number:STB270N4F3 STB270N TO-263-3

Place of Origin:Japan

Brand new MOS FET STB270N4F3 STB270N TO-263-3 mosfet Model number/ Part number STB270N4F3 STB270N Package TO-263- 3 Original condition Original 100% Brand name ST Stock Yes! In stock!! Bulk!! Contact me now Whatsapp/ Skype/ Number 86- 15102073750 - Product...

Brand Name:Hua Xuan Yang

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:OTOMO

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:AOS

Model Number:AO3407A

Place of Origin:original

AO3407A MOSFET Power Electronics Transistors FETs MOSFETs P-Channel 30 V 4.3A 1.4W Surface Mount Package SOT-23-3 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ ...

Brand Name:TOSHIBA

Model Number:TLP250

Place of Origin:Original

...TRANSISTOR INVERTER INVERTERS tv circuit boards led driver circuit board Transistor Inverter Inverter For Air Conditioner IGBT Gate Drive Power MOS FET Gate Drive The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a integrated photodetector. This unit is 8−lead DIP package. TLP250 is suitable for gate driving circuit of IGBT or power MOS FET...

Brand Name:Original

Model Number:IRFP460APBF

Place of Origin:Original

Chips Diode Transistor IRFP460APBF Integrated Circuits PRODUCT DESCRIPTION IC Integrated Circuits MOSFET 500V N-CH HEXFET Chips Diode Transistor PRODUCT PROPERTIES Manufacturer: Vishay Product Category: MOSFET Technology: Si Mounting Style: Through Hole ...

Brand Name:Original Factory

Model Number:IPL60R225CFD7AUMA1

Place of Origin:China

IPL60R225CFD7AUMA1 Stock MOSFET Transistor FET Good Price Product Description IPL60R225CFD7AUMA1 offers a cost-optimized, 10mΩ low on-resistance RDS(on), enabling increased power ...