60v low voltage p channel mosfet

Brand Name:AOS

Model Number:AOD407

Place of Origin:original

AOD407 MOSFET Power Electronics Transistors 60V 50W Surface Mount P-Channel Package TO-252 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

SGT Low Voltage MOSFET Trench/SGT Process Covering More Application *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, ...

Brand Name:Original Factory

Model Number:NTMFS4C024NT1G

Place of Origin:CN

...Channel Transistors 30V 5-DFN package Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Product Attributes Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage...

Brand Name:INFINEON

Model Number:IPD25N06S4L-30

Place of Origin:INFINEON

...60V N Channel Mosfet SMD SMT Mounting Style IPD25N06S4L-30 Fet patch to-252 25A 60V MOSFET screen 4N06L30N channel DPAK-2 OptiMOS-T2 Product Attribute Attribute Value Search Similar Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TO-252-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage...

Place of Origin:US

Brand Name:Original

Model Number:TPCA8016-H

Product Description Packaging Digi-Reel Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 25A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max...

Brand Name:JUYI

Model Number:JY2605M

Place of Origin:China

...60V 50A Dual N Channel Enhancement Mode Power MOSFET JY2605M for Motor Driver Solutions GENERAL DESCRIPTION The product utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. FEATURES 60V

Brand Name:Hua Xuan Yang

Model Number:AP3N10BI

Place of Origin:ShenZhen China

...Channel Mosfet Power Transistor Low Voltage 100V N Channel Mosfet Power Working and Characteristics The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET...

Brand Name:Huixin

Model Number:BC2301

Place of Origin:China

SOT-23 Plastic-Encapsulate MOSFETS BC2301 P-Channel 20-V(D-S) MOSFET BC2301 SOT-23 Datasheet.pdf FEATURES TrenchFET Power MOSFET MARKING: 2301 APPLICATIONS Load Switch for Portable Devices DC/DC Converter Maximum ratings (Ta=25℃ unless otherwise noted) ...

Brand Name:Ti

Model Number:CSD18540Q5B

...Mosfet Power Transistor MOSFET 60V, N-channel NexFET Pwr MOSFET 1 Features Ultra-Low Qg and Qgd Low-Thermal Resistance Avalanche Rated Lead-Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package 2 Applications DC-DC Conversion Secondary Side Synchronous Rectifier Isolated Converter Primary Side Switch Motor Control 3 Description This 1.8-mΩ, 60-V NexFETTM power MOSFET...

Brand Name:INFINEON

Model Number:IPD80R1K4P7

Place of Origin:original

...resistance and high switching speed, making it very suitable for use in low voltage applications. Conclusion: IPD80R1K4P7 has the following characteristics: Very low switching and conduction losses; High voltage limit, capable of operating at high voltage;

Brand Name:Alpha & Omega Semiconductor Inc.

Model Number:AOD4454

Place of Origin:CHINA

... low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current -

Brand Name:Infineon

Model Number:IRFB260NPBF

Place of Origin:China

... 1:High Voltage Capability: A drain-source voltage (Vds) of 200V, making it suitable for high-voltage applications such as switch-mode power supplies (after AC rectification, e.g., 85-265VAC), motor drives, and control systems. 2:High Current Handling: A

Brand Name:Microchip

Model Number:Onsemi

...channel MOSFET with a maximum drain current of 11A and a low on-state resistance of 0.109 ohms. Specification: Maximum Voltage Rating: 900V Maximum Drain Current: 11A On-State Resistance: 0.109 ohms Gate Threshold Voltage: 4V (typical) Features: High voltage capability Low...

Brand Name:Onsemi

Model Number:NVMTS1D2N08H

Place of Origin:Original

... Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Specifications Product Attribute Attribute Value Product Category: MOSFET Vds - Drain-Source Breakdown Voltage: 80 V Id - Continuous Drain Current:

Brand Name:SHENZHENFREESCALE

Model Number:AOD5N50

Place of Origin:Original

...popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. ...

Brand Name:CJ

Model Number:CJ2310 S10

Place of Origin:CHINA

... S10 NPN PNP Transistors N-Channel MOSFET Plastic-Encapsulate MOSFETS DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8H02ETS

20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS...

Brand Name:JUYI

Model Number:JY21L

Place of Origin:China

...IGBT driver based on P-SUB P-EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 150V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The

Brand Name:Diodes

Model Number:DMT6009LSS-13

Place of Origin:CHINA

...MOSFET N Channel 60V 10.8A Transistors FETS MOSFET N-CH 60V 10.8A 8SO T&R 2 Discrete Semiconductor DMT6009LSS-13 Specification : Part number DMT6009LSS-13 Category Discrete Semiconductor Products 　 Transistors - FETs, MOSFETs - Single Mfr Diodes Incorporated Series - Package Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage...

Brand Name:original

Model Number:NX7002AK,215

...Channel Trench MOSFET 60V 190mA Single SMD/SMT Products Description: The NX7002AK is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. Very Fast Switching ESD Protection Upto 1.5kV MOSFET N-CH 60V 190MA TO236AB Trans MOSFET N-CH 60V 0.19A 3-Pin TO-236AB T/R Relay driver High-speed line driver Low...