20v complementary power mosfet

Categories:High Power MOSFET

Country/Region:china

High Power MOSFET NTLJD3119C Complementary Power MOSFET 20V [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and ...

Model Number:2N6038

Place of Origin:original factory

Plastic DarliCM GROUPon complementary power mosfet , Silicon Power Transistors 2N6038 Plastic DarliCM GROUPon complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications. • High DC Current ...

Model Number:BM4608B

...20V complementary enhancement-mode MOSFET from BORN SEMICONDUCTOR, INC. It features low gate charge and is suitable for use in PWM applications and as a load switch. This device offers both N-Channel and P-Channel MOSFETs in a single package, providing complementary functionality. Product Attributes Brand: BORN SEMICONDUCTOR, INC. Model: BM4608B Type: Complementary Enhancement-Mode MOSFET...

Brand Name:N-X-P Semiconductors

Model Number:PMCXB900UE

Place of Origin:USA

PMCXB900UE 20V complementary N/P-channel Trench MOSFET Manufacturer: Nexperia Product Category: MOSFETs RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: DFN-1010-6 Transistor Polarity: N-Channel, P-Channel Number of Channels: 2 Channel ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:12H02TS

... a level shifted high side switch, and for a host of other applicatio Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

Brand Name:Hua Xuan Yang

Model Number:AP9926A

Place of Origin:ShenZhen China

...20V SOP-8 Mosfet Power Transistor For Battery Protection General Description: The AP9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID = 6A RDS(ON) < 25mΩ @ VGS=4.5V Application Battery protection Load switch Uninterruptible power...

Place of Origin:USA

Brand Name:ON Semiconductor

Model Number:NTHD3100CT1G

...Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET. Detailed Description of NTHD3100CT1G: EIS Part Number: EIS-NTHD3100CT1G Manufacturer Part Number: NTHD3100CT1G Manufacturer / Brand: ON Semiconductor Brief Description: Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary...

Place of Origin:USA

Brand Name:ON Semiconductor

Model Number:NTHD3100CT1G

...Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET. Detailed Description of NTHD3100CT1G: EIS Part Number: EIS-NTHD3100CT1G Manufacturer Part Number: NTHD3100CT1G Manufacturer / Brand: ON Semiconductor Brief Description: Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary...

Brand Name:Original Factory

Model Number:NTH4L040N120SC1

Place of Origin:CN

...Power MOSFET Transistors TO-247-4L​ Product Description Of NTH4L040N120SC1 NTH4L040N120SC1 is 1200V 58A(Tc) 319W (Tc) N-Channel Silicon Carbide Power MOSFET Transistors, package is TO-247-4L. Specification Of NTH4L040N120SC1 Part Number NTH4L040N120SC1 Current - Continuous Drain (Id) @ 25°C 58A (Tc) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 56mOhm @ 35A, 20V...

Brand Name:Vishay

Model Number:SI2333DDS-T1-GE3

Place of Origin:China

...Power MOSFET andbull; 100 % Rg Tested andbull; Material categorization: For definitions of compliance please see andnbsp; APPLICATIONS andbull; Smart Phones and Tablet PCs - Load Switch - Battery Switch andnbsp; Overview The Sl2333DDS-T1-GE3 is an advanced 20V P-channel MOSFET in an ultra-compact sC-70-3package, optimized for space-constrained, high-efficiency power...

Place of Origin:US

Brand Name:Original

Model Number:IRFP4710PBF, IRFP460PBF

...MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 72A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 14 mOhm @ 45A, 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6160pF @ 25V Power...

Brand Name:ONS

Model Number:NTGS3446T1G

...Power MOSFET 5.1 Amps, 20 Volts N?Channel TSOP?6 Specifications: Datasheets NTGS3446 Product Photos SC-74, SOT-457 Product Change Notification Wire Change 08/Oct/2008 Standard Package 3,000 Category Discrete Semiconductor Products Family FETs - Single Series - Packaging Tape & Reel (TR) FET Type MOSFET N-Channel, Metal Oxide FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V...

Brand Name:HT

Model Number:F4N65L TO-220F-3L

Place of Origin:China

...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power

Brand Name:JUYI

Model Number:JY13M

Place of Origin:China

JY13M N and P Channel 40V MOSFET for BLDC motor driver GENERAL DESCRIPTION The JY13M is the N and P Channel logic enhancement mode power field transistors Which can provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-...

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS ...

Brand Name:STMicroelectronics

Model Number:STP100N8F6

Place of Origin:Shenzhen, China

...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube Product Category Power

Brand Name:IR Original

Model Number:IR21094STRPBF

Place of Origin:Original & New

IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS...

Brand Name:JUYI

Model Number:JY09M

Place of Origin:China

... density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

Brand Name:Rixin

Model Number:DDM(N)325

Place of Origin:Wuhan, China

...20V High Power Output The solar panel is made to our specifications , the systems are ideal for homeuse with fridge ,light, and other home applicance. clean energy is needed. They are very popular among the international market and will the future tender of new energy. Electrical performance parameters N type monocrystalline bifacial dual glass solar panel / 325W / 60cells / 20V

Brand Name:Analog

Model Number:BZ15-200060-AU

Place of Origin:China

...20V DC Power Adapter 600mA 12W For Rechargeable Batteries Product Model: BZ15-200060-AU Certificate:BZ15 EN60335 CB certificate.PDF Features Model Name Output Voltage(VDC) Output Current (A) Output Power(W ) GQ/BZ15-XXX-YYY-WW 8.4~13.0 0.01~1.6 15.00 GB/BZ=ANALOG Company Code 13.1~18.0 0.01~1.15 15.00 15=Out Power...