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rf mosfet for amplifiers

from 35 Products

Portable multi band coverage 50W 100W 500MHz 1000MHz Jail rf wireless power amplifier

China Portable multi band coverage 50W 100W 500MHz 1000MHz Jail  rf wireless power amplifier on sale
...rf wireless power amplifier The multiple band 50W 100W RF signal power amplifier module is without VCO designed ,it can covery frequency wide band frequecy 100-1000mhz 500-1000mhz .It is a wireless power amplifier that can application in Jail to jamming with drones around the prison to maintain prison order. Texin is a professional supplier of RF technology area ,With professional RF......
Amplifier module

Address: 201, Building A, No.1 Xinghua Road, Pingxi Community, Pingdi Street, Longgang District, Shenzhen

300MHz 20W RF Linear Power Amplifier With 59dB 28V Anti Interference

China 300MHz 20W RF Linear Power Amplifier With 59dB 28V Anti Interference on sale
... 20W RF Linear Power Amplifier with 59dB 28V Anti-interference ​High power RF Linear PN Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28,6A to it; Prevent the interference of high radiated RF power to ......
Kimpok Technology Co., Ltd

Address: Rm616, Kingsignal signal communication technology industrial park, No. 50 Baolong 2nd road, Longgang District, Shenzhen, China

MHVIC910HNR2 921 MHz-960 MHz SiFET RF Integrated Power Amplifier FSL RF Power Transistors MODULE

China MHVIC910HNR2 921 MHz-960 MHz SiFET RF Integrated Power Amplifier FSL RF Power Transistors MODULE on sale
...RF Integrated Power Amplifier. Part NO: MHVIC910HNR2 Brand: FSL Date Code: 09+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / PHS repeaters, trunk amplifiers, tower mounted amplifiers......
Mega Source Elec.Limited

Address: R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031

1 - 2GHz RF Power Amplifier Module High Stability Low Power Consumption

China 1 - 2GHz RF Power Amplifier Module High Stability Low Power Consumption on sale
...-Band , RF Low Noise Amplifier LNA , RF Power Amplifier Module Model: VBP2GL VBE RF Power Amplifier Module Instructions: VBE solutions of RF modules including radio frequency signal source,radio frequency power amplifier(PA),low noise amplifier(LNA), Radio......
VBE Technology Shenzhen Co., Ltd.

Address: Floor 4, Building 8, Xinwei Industrial Zone, Nanshan District, Shenzhen, Guangdong Province, China

1000 watts sound digital car amplifier for sale

China 1000 watts sound digital car amplifier for sale on sale
...amplifier for sale car amplifier specification: Feature 1CH digital 1CH class D power amplifier Double Side Through Hole Epoxy PCB Military spec audiophile grade components 1Ohm stable circuits Variable low pass electronic crossover Anti radio interference Extraheavy heat sink for better dissipation Thermal/Short-circuit/overloading protection 4CH class AB 4CH mosfet power amplifier High efficiency mosfet......
Shenzhen XHR Car Audio Technology Co., LTD.

ASI MRF9045LR1 Transistors RF Bipolar Transistors 18.8dB

China ASI MRF9045LR1 Transistors RF Bipolar Transistors 18.8dB on sale
MRF9045LR1Transistors RF Bipolar Transistors Si original in stock The ASI MRF9045LR1 is a high voltage, gold-metalized, laterally diffused metal oxide semiconductor. Ideal for today's RF power amplifier Applications. Product Category: RF MOSFET Transistors......
Walton Electronics Co., Ltd.

Address: 5C,Building D,GALAXY WORLD.Longhua District, Shenzhen.CN

Darlington Bipolar Mosfet Power Transistor TIP142 Amplifier Switching Applications

China Darlington Bipolar Mosfet Power Transistor TIP142 Amplifier Switching Applications on sale
...Mosfet Power Transistor TIP142 for amplifier and switching applications TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features Designed for general-purpose amplifier......
Shenzhen ATFU Electronics Technology ltd

Address: Room 1120, Floor 11rd, New Asia Guoli Building, Futian District,Shenzhen City, Guangdong Province China,Zip:518031

BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW

China BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW on sale
BF 999 E6327 RF MOSFET Transistors Silicon N-Channel MOSFET Triode 1.Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz preferably in FM applications • Pb-free (RoHS compliant) package1) 2.Why choose us? ......
Shenzhen Hongxinwei Technology Co., Ltd

Address: 3418, Duhuixuan, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China

Practical Mono Class D Amplifier Chip , IRS2092STRPBF Amplifier Integrated Circuit

China Practical Mono Class D Amplifier Chip , IRS2092STRPBF Amplifier Integrated Circuit on sale
.... In conjunction with two external MOSFET and a few external components, a complete Class D audio amplifier with protection can be realized. International Rectifier’s proprietary noise isolation technology allows high current gate drive stage and...
Sanhuang electronics (Hong Kong) Co., Limited

Address: No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China

Bais Tee Input Rf DC 5 VOLT Frequncy 0~2Ghz DC-Blocker 10-6000MHz Amplifier DC Bias

China Bais Tee Input Rf DC 5 VOLT Frequncy 0~2Ghz  DC-Blocker 10-6000MHz Amplifier DC Bias on sale
...communication data injected through the RF side Working parameters: 1. Frequency range: 10 - 6000MHz 2. Insertion loss: 0.3dB@512MHz 0.45dB@1575MHz 3. Maximum voltage: 50V 4. Maximum current: 500mA 5. RF connector: SMA-K (outer screw inner hole) 6. System...
Shenzhen Hicorpwell Technology Co., Ltd

Address: Rm 604 Bldg 9th Yinxingyuan South Rd Nanshan District 518054 Shenzhen China

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