3A 500V 2.85Ω N-Channel High Power MOSFET For Hairdryer And Adaptor
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...FEATURES • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanche energy Test APPLICATIONS • Power switch circuit of adaptor and charger. Q1.Who are we? A:We are based in Guangdong, China,factory start from 2012,is a...
Guangdong Lingxun Microelectronics Co., Ltd
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MOSFET Power Electronics MGSF2N02ELT1G SOT-23 Package 2.8 A 20 VN Channel Enhancement Mode MOSFET Transistor
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MOSFET Power Electronics MGSF2N02ELT1G SOT-23 Package 2.8 A 20 VN Channel Enhancement Mode MOSFET Transistor FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 2.8A (Ta) Drive ......
Shenzhen Sai Collie Technology Co., Ltd.
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9435A -30V P-Channel Enhancement Mode MOSFET
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...Channel Enhancement Mode MOSFET Description General Description: The 9435A is the single P-Channel logic enhancement mode power field effect transistors to provide excellent RDS(on), low gate charge and low gate resistance. It’s up to -30V operation voltage is well suited in switching mode power supply, SMPS, notebook computer power management and other battery powered......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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ZXMP10A17E6TA 100V P-CHANNEL ENHANCEMENT MODE MOSFET linear power mosfet trench power mosfet
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...CHANNEL ENHANCEMENT MODE MOSFET linear power mosfet trench power mosfet FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23-6 package APPLICATIONS • DC–DC Converters • Power Management functions • Disconnect switches • Motor control DESCRIPTION This new generation of Trench MOSFETs......
ChongMing Group (HK) Int'l Co., Ltd
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FS8205A Dual N Channel Enhancement Mode MOSFET 20V 6A
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...Channel Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 2.Features RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low On-Resistance • High Power......
Shenzhen Hongxinwei Technology Co., Ltd
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40V Integrated Circuit Chip DMT47M2SFVWQ 150°C N-Channel Enhancement Mode MOSFET
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... QG × RDS(ON) product (FOM) and low RDS(ON). The low RDS(ON) ensures that the on-state losses are minimal. This MOSFET assures reliable and robust end application due to 100% unclamped inductive switching and test in production. DMT47M2SFVWQ MOSFET is...
ShenZhen Mingjiada Electronics Co.,Ltd.
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High Power MOSFET RFD12N06RLESM N-Channel UltraFET® Power MOSFET 60V 17A 71mΩ
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High Power MOSFET RFD12N06RLESM N-Channel UltraFET® Power MOSFET 60V 17A 71mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in ......
Sunbeam Electronics (Hong Kong) Limited
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F16N65L TO-220F-3L N-CHANNEL High Power MOSFET 16A 650V Applications In Switching Power Supplies And Adaptors
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... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in...
Shenzhen Hunt Electronics Co., Ltd
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N Channel High Power MOSFET Device Durable For Solar Inverter
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...h as Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply and Charging Pile. This MOSFET is capable of handling high current and delivering maximum performance with its low on-resistance. It is also known as...
Reasunos Semiconductor Technology Co., Ltd.
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IGBT Power Module FMH23N50E - Fuji Electric - N-CHANNEL SILICON POWER MOSFET
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...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing ......
Mega Source Elec.Limited
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