SI2305CDS-T1-GE3 N-Channel MOSFET Power Transistor for High-Speed Switching Applications
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SI2305CDS-T1-GE3 N-Channel MOSFET Power Transistor for High-Speed Switching Applications Product Features: • N-Channel MOSFET • 30V drain-source voltage • 0.005Ω maximum on-state resistance • 1.5A (Tc) continuous drain current • Surface mount package • ......
Shenzhen Sai Collie Technology Co., Ltd.
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TC4420CPA high power mosfet transistors Power Mosfet Transistor 6A HIGH-SPEED MOSFET DRIVERS
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TC4420 TC4429 6A HIGH-SPEED MOSFET DRIVERS FEATURES ■ Latch-Up Protected ............ Will Withstand >1.5A Reverse Output Current ■ Logic Input Will Withstand Negative Swing Up to 5V ■ ESD Protected ..................................................... 4kV......
Anterwell Technology Ltd.
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1200 Volt SiC N-Channel MOSFET Bruckewell CMS120N080B High Speed Switching Device for Power Conversion
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... to low capacitance and high system efficiency. This MOSFET is suitable for easy paralleling and is ideal for demanding applications such as solar inverters, switch mode power supplies, UPS, induction heating and welding, EV charging stations, and...
Hefei Purple Horn E-Commerce Co., Ltd.
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TC4420CPA high power mosfet transistors Power Mosfet Transistor 6A HIGH-SPEED MOSFET DRIVERS
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TC4420 TC4429 6A HIGH-SPEED MOSFET DRIVERS FEATURES ■ Latch-Up Protected ............ Will Withstand >1.5A Reverse Output Current ■ Logic Input Will Withstand Negative Swing Up to 5V ■ ESD Protected ..................................................... 4kV......
ChongMing Group (HK) Int'l Co., Ltd
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IRF9540NPBF P Channel Mosfet Transistor , 100V 23A Fast Switching Transistor
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...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in...
Shenzhen ATFU Electronics Technology ltd
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High Speed Switching Photocoupler Cosmo KTLP250S 8 Lead DIP Package for IGBT Gate Drive Applications
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...DIP package IGBT gate drive photocoupler designed for driving IGBT or power MOSFETs. It features high speed switching and excellent isolation characteristics. Product Attributes Brand: Cosmo Electronics Corp. Package: 8-lead DIP Certifications: UL Approved......
Beijing Silk Road Enterprise Management Services Co., Ltd.
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IGT60R070D1ATMA1 Gan Power Transistors , Industrial High Speed Transistor
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Mosfet Power Transistor IGT60R070D1ATMA1 Mosfet 600V CoolGaN Power Transistor Feature • Enhancement mode transistor – Normally OFF switch • Ultra fast switching • No reverse-recovery charge • Capable of reverse conduction • Low gate charge, low output ......
Shenzhen Weitaixu Capacitor Co.,Ltd
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1SS226 Switching Diodes Silicon Epitaxial Planar For Ultra High Speed Switching
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1SS226 Switching Diodes Silicon Epitaxial Planar for Ultra-High-Speed Switching 1. Applications • Ultra-High-Speed Switching 2. Features (1) AEC-Q101 qualified Feature High-speed switching Internal Connection Series Number of Circuits 2 AEC-Q101 Qualified......
Angel Technology Electronics Co
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MUR860G Transistor IC Chip Powerful Rectifier Diode For High Speed Switching
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Discover the Pros and Cons of the MUR860G Diode A Comprehensive Guide to Buying the MUR860G for Your Electronics Projects Looking for a reliable and efficient diode for your electronics projects? Look no further than the MUR860G. As a powerful rectifier ......
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
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IXFN56N90P 900V 56A N-Channel MOSFET Ultra-Low Rds(on) 135mΩ HiPerFET™ Polar Technology Fast Body Diode Low Qg High-Speed Switching SOT-227B Package for UPS and Drives
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...MOSFET Ultra-Low Rds(on) 135mΩ HiPerFET™ Polar Technology Fast Body Diode Low Qg High-Speed Switching SOT-227B Package for UPS and Drives Features International Standard Package miniBLOC, with Aluminium Nitride Isolation Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Applications High Power Density Easy to Mount Space Savings Description Switch......
TOP Electronic Industry Co., Ltd.
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