P Channel DIP Mosfet Power Transistor 100V 40A 200W TO-220 IRF5210PBF Lead Free
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...Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs......
Shenzhen ATFU Electronics Technology ltd
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Electric Motorcycle 18 Mosfet Power Transistor With 24 Months Warranty
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...power transistors for electric motorcycle 18 mosfets 35A controller 48-96v factory direct Specifications of our controller In order to better play the controller's performance and product stability, all of our controllers use imported power transistors. Rated voltage 48-96v Rated Power 800-2000w Color silver Mosfet 18 Model 18 mosfets......
Changzhou Suring motor technology CO.,LTD
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IPG20N06S4L14AATMA1 Power Transistor IC Chip N Channel MOSFET 40V 60V
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...Power Transistor N Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TDSON-8 Transistor...
Walton Electronics Co., Ltd.
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MRF6VP3450HR5 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs FSL RF Power Transistors RF
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MRF6VP3450HR5 is a RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFET. Part NO: MRF6VP3450HR5 Brand: FSL Date Code: 322+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......
Mega Source Elec.Limited
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high power jump starter super capacitor battery 16v 500f 2000f 3000f jump starter air compressor
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...h us can make us more powerful. In the whole solar energy system, the storage battery plays a very important role 50000 cycles, super long life, unlikely explosion, no overheating, ......
Hefei Purple Horn E-Commerce Co., Ltd.
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50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor
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...Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor......
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
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INFINEON Mosfet Power IC Chip IRLML6401TRPBF P-CH 12V 4.3A SOT23
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INFINEON Chip IRLML6401TRPBF MOSFET P-CH 12V 4.3A SOT23 Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-......
Beijing Silk Road Enterprise Management Services Co., Ltd.
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Wide Band 700-3600MHz 20W RF Power Transistor LDMOS FETs 28V Broad-Band LDMOS RF Transistor, High Power RF Transistors
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VBE Technology Shenzhen Co., Ltd.
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STAV58010P2 Gallium Nitride 50V, 10W, DC-6GHz RF Power Transistor
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Gallium Nitride 50V, 16W, DC-6GHz RF Power Transistor Description The STAV58016P2 is a 16 watt, unmatched GaN HEMT, ideal for general applications up to 6GHz. It features high gain, wide band and low cost, in 4*4.5mm DFN plastic package. It can support CW......
Sanhuang electronics (Hong Kong) Co., Limited
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TI Amplifier Audio Power Transistors BQ26100DRPR NPN PNP
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NPN PNP Transistor Texas Instruments/TI BQ26100DRPR ECAD Module Build or Request PCB Footprint or Symbol Supply and Demand Status Balance Fake Threat In the Open Market 54 pct. Popularity High Is this a common-used part? Yes Win Source Part Number 011972-......
Yingxinyuan Int'l(Group) Ltd.
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