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mosfet 600v

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Low Gate Charge Igbt Mosfet High Power N Channel Power Mosfet 600V TO247-3

China Low Gate Charge Igbt Mosfet High Power N Channel Power Mosfet 600V  TO247-3 on sale
Infineon MOSFET N-Ch 650V 20.7A TO247-3 CoolMOS C3,600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working......
Shenzhen Hongxinwei Technology Co., Ltd

Address: 3418, Duhuixuan, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China

HUAKE SMT10N60 N Channel MOSFET 600V voltage rating low Crss and avalanche tested for switching performance

China HUAKE SMT10N60 N Channel MOSFET 600V voltage rating low Crss and avalanche tested for switching performance on sale
...600V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching applications. Key features include low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it suitable for high-frequency switching mode power supplies and active power factor correction.Product Attributes Brand: HUAKE semiconductors Model: SMT10N60 Type: N-Channel MOSFET......
Hefei Purple Horn E-Commerce Co., Ltd.

Address: Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province

SPA20N60C3 Transistor And MOSFET 600V 20A For High Performance Electronics

China SPA20N60C3 Transistor And MOSFET 600V 20A For High Performance Electronics on sale
... performance and efficiency in a wide range of applications. With a voltage rating of 600V and a current rating of 20A, this Mosfet is perfect for high-performance electronics that demand top-of-the-line power management. One of the major pros of the...
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

Address: Room 2204-2206, Building A, Phase II, Excellence City, Meilin Road, Futian District, Shenzhen

JY16M BLDC Motor Driver IC MOSFET 600V/4A For Fast Switching And Body Recovery

China JY16M BLDC Motor Driver IC MOSFET 600V/4A For Fast Switching And Body Recovery on sale
JY16M N Channel Enhancement Mode Power MOSFET 600V/4A For Fast Switchong And Body Recovery General Description The JY16M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive ......
Changzhou Bextreme Shell Motor Technology Co.,Ltd

Address: No.8 Tianshan road, Xinbei district,Changzhou,Jiangsu,China.

High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK

China High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK on sale
... Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (......
Shenzhen Koben Electronics Co., Ltd.

Address: C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031

SIHW30N60E-GE3 High Performance 30A 600V N Channel MOSFET for Power Electronics

China SIHW30N60E-GE3 High Performance 30A 600V N Channel MOSFET for Power Electronics on sale
... 30A 600V N Channel MOSFET for Power Electronics Product Features: -High Speed Switching -Low Gate Charge -Low On-Resistance -TrenchFET Power MOSFET -Excellent Gate Charge x RDS(on) Product Technical Specifications: -Drain-Source Voltage: 600V -Continuous ......
Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

SSS7N60B 600V N-Channel MOSFET power mosfet ic Field Effect Transistor

China SSS7N60B  600V N-Channel MOSFET power mosfet ic Field Effect Transistor on sale
SSS7N60B 600V N-Channel MOSFET power mosfet ic Field Effect Transistor Features • 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V • Low gate charge ( typical 38 nC) • Low Crss ( typical 23 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • ......
Anterwell Technology Ltd.

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

Single High Voltage Mosfet Power Transistor DC SIHB22N60E-E3 ROHS

China Single High Voltage Mosfet Power Transistor DC SIHB22N60E-E3 ROHS on sale
...MOSFET POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK MSL 1 SINGLE N-CHANNEL MOSFETS......
Shenzhen Huahao Gaosheng Technology Co., Ltd

Address: 2A2003, Building 2, Baohuju Garden, 200 Huaqing Avenue, Qinghu Community, Longhua Street, Longhua District, Shenzhen

N Channel Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive

China N Channel Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive on sale
...Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive Mosfet Power Transistor Description The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other Mosfet Power Transistor General Features V DS =200V,I D =5A R DS(ON) <520mΩ @ V GS =4.5V Mosfet......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province

Super Junction SJ7N60 N-Channel MOSFET 7A 600V with 600V Drain-Source Breakdown Voltage

China Super Junction SJ7N60 N-Channel MOSFET 7A 600V with 600V Drain-Source Breakdown Voltage on sale
Product Description Super Junction N-Channel Power MOSFET Electronics Component Part Number: SJ7N60 Major Parameter: Type Channel VDSS(V) (MAX) ID(A) (MAX) PD(W) (MAX) VGS(V) (MAX) VTH(V) Rds(on)(Ω) @10V (Typ) Rds(on)(Ω) @10V (max) Rds(on)(Ω) @4.5V(Typ) ......
Jinan Jingheng Electronics Co., Ltd.

Address: No. 51 Heping Rd, Lixia District, Jinan, Shandong, China 250000

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