KUP40H12R4-7M Insulated Gate Bipolar Transistor Module Assembly for Power Management
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...Gate Bipolar Transistor Assembly The Ultimate Solution for Power Management Product Description: The Insulated Gate Bipolar Transistor Module, commonly known as IGBT Module, is a crucial component in electronic circuits, offering efficient power control and switching capabilities. This versatile module combines the features of an Insulated Gate Transistor and Diode Circuit Module......
Krunter Future Tech (Dongguan) Co., Ltd.
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ABB FS450R17KE3/AGDR-71C S DCS INSULATED GATE BIPOLAR TRANSISTOR MODULE
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Product Description ABB FS450R17KE3/AGDR-71C S DCS INSULATED GATE BIPOLAR TRANSISTOR MODULE Technical Application *Decentralized control system *Turbine control, monitoring and protection system *Real-time information management and optimization system *......
Wuhan Sean Automation Equipment Co.,Ltd
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MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti-Parallel Diode
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Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247 12 A @ 90°C 20 A @ 25°C 1200 VOLTS SHORT CIRCUIT RATED This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft ......
ChongMing Group (HK) Int'l Co., Ltd
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Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1
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PRODUCT DESCRIPTION Lastest Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage......
Guangzhou Topfast Technology Co., Ltd.
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GT20J101 Thyristor Module Insulated Gate Bipolar Transistor Silicon N Channel
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GT20J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.30 µs (max) • Low Saturation Voltage: VCE (sat) = 2.7 V (max) Characteristic Symbol ......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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APT50GT60BRDQ2G Insulated Gate Bipolar Transistor IGBT Module Microsemi Corporation 50GT60
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APT50GT60BRDQ2G IGBT Power Module Transistors IGBTs Single APT50GT60BRDQ2G Specifications Part Status Active IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 110A Current - Collector Pulsed (Icm) 150A Vce(on) (......
KZ TECHNOLOGY (HONGKONG) LIMITED
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IKWH50N65WR6XKSA1 Insulated Gate Bipolar Transistor 650V For Home Appliances
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IKWH50N65WR6XKSA1 IGBT Transistors HOME APPLIANCES 14 Infineon Technologies TRENCHSTOP™ 5 Reverse Conducting IGBTs Infineon Technologies TRENCHSTOP™ 5 Reverse Conducting IGBTs are optimized for full-rated hard switching turn off typically found in welding ......
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1
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IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage (V) -58 to 58 Signaling rate (Max) (Mbps) 5 TI functional safety category Functional Safety-Capable Rating ......
Yingxinyuan Int'l(Group) Ltd.
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VS-GT80DA120U Insulated Gate Bipolar Transistor Vishay Semiconductors
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IGBT Module Trench Single 1200 V 139 A 658 W Chassis Mount SOT-227...
UDEL Chips Tech Co., Ltd.
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Insulated Gate Bipolar Transistor IGBT Power Module Semiconductor Device for inverter
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Guangdong Zhufeng Electric Co., Ltd.
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