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dram micron

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MT48LC4M16A2TG-75 IT:G TR Synchronous Dram IC MICRON TSOP4 Meg X 4 X 4 Banks

China MT48LC4M16A2TG-75 IT:G TR  Synchronous Dram IC MICRON TSOP4 Meg X 4 X 4 Banks on sale
... Dram MICRON Original Package TSOP Tray MT48LC16M4A2 – 4 Meg x 4 x 4 banks GENERAL DESCRIPTION The Micron® 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits. It is internally configured as a quadbank DRAM wit......
ChongMing Group (HK) Int'l Co., Ltd

Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN

MT48LC4M16A2TG Synchronous Dram IC MICRON TSOP4 Meg X 4 X 4 Banks

China MT48LC4M16A2TG Synchronous Dram IC MICRON TSOP4 Meg X 4 X 4 Banks on sale
... Dram MICRON Original Package TSOP Tray MT48LC16M4A2 – 4 Meg x 4 x 4 banks GENERAL DESCRIPTION The Micron® 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits. It is internally configured as a quadbank DRAM wit......
DELI ELECTRONICS TECHNOLOGY CO.,LTD

Address: RM 311 3/F LINZHAN FORTUNE BUILDING No.1 SHENHUA STREET SHENFENG ROAD LIUYUE LONGGANG AREA SHENZHEN,CHINA

MT44K16M36RB-107E:B TR IC DRAM 576MBIT PAR 168BGA Micron Technology Inc.

China MT44K16M36RB-107E:B TR IC DRAM 576MBIT PAR 168BGA Micron Technology Inc. on sale
... Attribute Attribute Value Manufacturer Micron Technology Inc. Product Category Resonators Mfr Micron Technology Inc. Series - Package Tape & Reel (TR) Product-Status Active Memory-Type Volatile Memory-Format DRAM Technology DRAM Memory-Size 576Mb (16M......
Sanhuang electronics (Hong Kong) Co., Limited

Address: No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China

MT41K256M16TW-107 IT:P Micron Technology 4Gbit DDR3L SDRAM Memory IC in 96-FBGA Package for High-Speed Applications

China MT41K256M16TW-107 IT:P Micron Technology 4Gbit DDR3L SDRAM Memory IC in 96-FBGA Package for High-Speed Applications on sale
...Micron Technology Inc. IC DRAM 4GBIT PAR 96FBGA Product Overview High-performance 4Gbit DDR3L SDRAM module from Micron Technology featuring parallel memory interface and industrial temperature range operation. Manufacturer Micron Technology Inc. Part Status Active Packaging Box Technical Specifications Memory Type Volatile Memory Format DRAM......
HK NeoChip Technology Limited

Address: Futian District Huaqiang Subdistrict, Huaqiang Garden, Building A, Room 31C

MT62F512M32D2DS-031 WT:B DRAM LPDDR5 16G 512MX32 FBGA DDP

China MT62F512M32D2DS-031 WT:B DRAM LPDDR5 16G 512MX32 FBGA DDP on sale
DRAM LPDDR5 16G 512MX32 FBGA DDP Product Attribute Attribute Value Select Attribute Manufacturer: Micron Technology Product Category: DRAM Type: SDRAM Mobile - LPDDR5 Mounting Style: SMD/SMT Data Bus Width: 32 bit Organization: 512 M x 32 Memory Size: 16 Gbit Maximum Clock Frequency: 3.2 GHz Supply Voltage - Max: 1.05 V Minimum Operating Temperature: - 25 C Maximum Operating Temperature: + 85 C Packaging: Tray Brand: Micron Product Type: DRAM...
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

Address: FLAT/RM D52 3/F WONG KING INDUSTRIAL BUILDING NO 2TAU=I YAU STREET

DRAM Dynamic Random Access Memory MT46V32M16P-5B:J Easy Integration

China DRAM Dynamic Random Access Memory MT46V32M16P-5B:J Easy Integration on sale
...5B:J is a Dynamic Random Access Memory (DRAM) produced by Micron Technology, and its key parameters are as follows: Basic Information Manufacturer: Micron Technology Model: MT46V32M16P-5B:J Type: DDR DRAM Storage Parameters Storage Capacity: 512Mb (or ......
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

Address: Room 2204-2206, Building A, Phase II, Excellence City, Meilin Road, Futian District, Shenzhen

DRAM Dynamic Random Access Memory 32G MT53D1024M32D4DT-053 AIT:D

China DRAM Dynamic Random Access Memory 32G MT53D1024M32D4DT-053 AIT:D on sale
MT53D1024M32D4DT-053 AIT:D Micron DRAM LPDDR4 32G 1GX32 FBGA QDP VFBGA-200 MT53D1024M32D4DT-053 AIT:D TR MT53D1024M32D4DT-053 AAT:D MT53D1024M32D4DT-053 AAT:D TR Manufacturer: Micron Technology Product Type: Dynamic Random Access Memory Type: SDRAM Mobile......
Eastern Stor International Ltd.

Address: Room 4513, Block C, CEIEC Building, Huaqiang North Rd, Futian District, Shenzhen, Guangdong, China 518031

EDBA164B2PR-1D-F-R Micron DRAM LPDDR2 16G 256MX64 FBGA QDP

China EDBA164B2PR-1D-F-R    Micron  DRAM LPDDR2 16G 256MX64 FBGA QDP on sale
EDBA164B2PR-1D-F-R Micron DRAM LPDDR2 16G 256MX64 FBGA QDP ....
Wisdtech Technology Co.,Limited

Address: Room 1205-1207, Nanguang building, Huafu Road, Futian District, Shenzhen, Guangdong, China

Flash Memory IC Chip MT4LC4M16R6TG-5 - Micron Technology - DRAM

China Flash Memory IC Chip MT4LC4M16R6TG-5 - Micron Technology - DRAM on sale
Quick Detail: DRAM Description: The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits......
Mega Source Elec.Limited

Address: R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031

MT41K512M16HA 125IT A IC DRAM 8GBIT Eeprom Chip PARALLEL 96FBGA

China MT41K512M16HA 125IT A IC DRAM 8GBIT Eeprom Chip PARALLEL 96FBGA on sale
MT41K512M16HA-125IT:A IC DRAM 8GBIT PARALLEL 96FBGA Mfr Micron Technology Inc. Series - Package Tray Product Status Obsolete Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR3L Memory Size 8Gbit Memory Organization 512M x 16 Memory Interface ......
J&T ELECTRONICS LTD

Address: ROOM32 11/F LEE KA INDUSTRIAL BUILDING,8 NG FONG STREET SAN PO KONG, KL, HONGKONG.

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