Compact PIN Field Effect Transistor High Sensitivity For Fiber Optic Gyroscope
|
... Introduction As the optical information receiver of optical receiver system, PINFET (P-Intrinsic-N Field-Effect Transistor) acts as voltage amplified optoelectronic converter. Specification Parameters, such as linearity response, minimum linear optical......
Wuhan Liocrebif Technology Co., Ltd
|
IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer
|
IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer 2SK3797 Field Effect Transistor Silicon N-Channel MOS Type Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) • High ......
Anterwell Technology Ltd.
|
Metal Oxide Semiconductor Field Effect Transistor With RoHS Certificate
|
|
...Field Effect Transistor With RoHS Certificate Metal Oxide Semiconductor Field Effect Transistor Features Low gate charge Low Rdson(typical 5.5mΩ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product Avalanche energy tested Improved dv/dt capability,high ruggedness Metal Oxide Semiconductor Field Effect Transistor......
Shenzhen Canyi Technology Co., Ltd.
|
Linear Power Mos Field Effect Transistor Vertical Structure 3403D-U-V
|
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature 30V/100A R DS(ON) = 2.4mΩ(typ.) @V GS = 10V R DS(ON) = 2.9mΩ(typ.) @V GS = 4.5V 100%...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
|
N Channel Field Effect Transistor Mosfet Discrete Semiconductors IRFS3207ZTRRPBF
|
|
MOSFET Transistors Field Effect Transistor Discrete Semiconductors IRFS3207ZTRRPBF N Channel Product Range MOSFET Transistors Field Effect Transistor Discrete Semiconductors IRFS3207ZTRRPBF N Channel MOSFET MOSFT 75V 170A 4.1mOhm 120nC App Characteristics ......
KZ TECHNOLOGY (HONGKONG) LIMITED
|
Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor
|
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ...
Beijing Silk Road Enterprise Management Services Co.,LTD
|
Field Effect Transistor P Channel BLUE ROCKET BRCS150P02ZJ Suitable for Power Management Applications
|
...Field Effect Transistor designed for power management applications. It is housed in a compact DFN 2x2B-6L plastic package and is suitable for use in notebook computers, portable equipment, and battery-powered systems. This product is halogen-free. Product Attributes Brand: FS (implied by http://www.fsbrec.com) Product Type: P-Channel Enhancement Mode Field Effect Transistor......
Hefei Purple Horn E-Commerce Co., Ltd.
|
WSF28N06 Field Effect Transistor IC Chip N Channel MOSFET Metal Oxide
|
.... It is commonly used in power supply circuits and other switching applications. Specification item value Model Number WSF28N06 Type Bipolar Transistor Place of Origin China Guangdong D/C...
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
|
TK13A60D TOSHIBA Field Effect Transistor
|
TK13A60D(STA4,Q,M) TOSHIBA Field Effect Transistor 13A 600V 0.33 Ohm N-Channel MOS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Applications Switching Voltage Regulators Description Toshiba π-MOS VII MOSFETs are 10V Gate ......
Shenzhen Retechip Electronics Co., Ltd
|
BSL207SP L6327 GaN field effect transistor P-Ch -20V 6A TSOP-6
|
Manufacturer: Infineon Product category: GaN field effect transistor Installation style: SMD/SMT Package/box: TSOP-6 Transistor polarity: p-channel Number of channels: 1 Channel Vds- drain-source breakdown voltage: 20 V. Id- continuous drain current: 6 A ......
Shenzhen Hefengxin Technology Co., Ltd.
|
