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cgh35015f high power transistor

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QM10HB-H DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE MITSUBISHI IGBT Power Module

China QM10HB-H DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE MITSUBISHI IGBT Power Module on sale
...HIGH POWER TRANSISTOR INSULATED TYPE. Part NO: QM10HB-H Brand: MITSUBISHI Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws Overview We specialize in high power and power conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT, IPM, GTR, DC-DC, AC-DC rectifier and power supply and other modules. Applications: power......
Mega Source Elec.Limited

Address: R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031

700-1000MHz LDMOS FETs RF High Power Transistors 28V 260W With Integrated ESD Protection

China 700-1000MHz LDMOS FETs RF High Power Transistors 28V 260W With  Integrated ESD Protection on sale
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VBE Technology Shenzhen Co., Ltd.

Address: Floor 4, Building 8, Xinwei Industrial Zone, Nanshan District, Shenzhen, Guangdong Province, China

Switch Circuit High Voltage Npn Power Transistor TIP42C 100V 6A TO220 Package

China Switch Circuit High Voltage Npn Power Transistor TIP42C 100V 6A TO220 Package on sale
...Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching applications. The complementary PNP type is TIP42C Features Complementary PNP-NPN devices New enhanced series High......
Shenzhen ATFU Electronics Technology ltd

Address: Room 1120, Floor 11rd, New Asia Guoli Building, Futian District,Shenzhen City, Guangdong Province China,Zip:518031

50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor

China 50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor on sale
...High Electron Mobility GAN RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor is supplied in a ceramic /metal flange package. Votage 28V Pout 50W Features: High...
Zhongshi Zhihui Technology (suzhou) Co., Ltd.

Address: Room 107, Sanjiang Yuan, 399 Linquan Street, Suzhou Industrial Park, Suzhou City, Jiangsu Province

IPG20N06S4L14AATMA1 Power Transistor IC Chip N Channel MOSFET 40V 60V

China IPG20N06S4L14AATMA1 Power Transistor IC Chip N Channel MOSFET 40V 60V on sale
...Power Transistor N Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TDSON-8 Transistor...
Walton Electronics Co., Ltd.

Address: 5C,Building D,GALAXY WORLD.Longhua District, Shenzhen.CN

High Power Led heat sink Customized Aluminum Zipper Fin Heatsink With Heat pipe Heatsink for transistor

China High Power Led heat sink Customized Aluminum Zipper Fin Heatsink With Heat pipe Heatsink for transistor on sale
High Power Led heat sink Customized Aluminum Zipper Fin Heatsink With Heat pipe Heatsink for transistor Short details: Product type: heatsink Surface treatment: Silver Anodize Warranty(year): 2 years. Process: Extrusion IP rating IP65 Cetification:CS, GS, ROHS place of original: Guangdong (China) Application: LED Heatsink , for transistor......
LiFong(HK) Industrial Co.,Limited

Address: Taixin Road,Wanjiang Town,Dongguan City,Guangdong Province,P.R.China

NO Display Screen 50W High Power Shoulder Carry Transistor Megaphone for DC Sale

China NO Display Screen 50W High Power Shoulder Carry Transistor Megaphone for DC Sale on sale
... strap for easy carrying AUDIO-Specification Model: UM3001 (Basic) Main Material: ABS Product Dimension: Ø230 x L350mm Power: Max 50W Power Supply: 8x C(or...
Ningbo Uma Electronic Technology Co., Ltd.

Address: Room 2013, South Building, Yinzhou Chamber Of Commerce, Ningbo, Zhejiang, China

CGH35015F

China CGH35015F on sale
...refer to the data sheet, such as PDF files Docx documents, etc. We have CGH35015F high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more ......
Rozee Electronics Co., Ltd

Address: Flat A1-H, 10 / F, Block A, Yue Lam Industrial Centre, 2-28 Kwai Lok Street, Kwai Chung, Hong Kong

High Power Optical Circulator Small Size Bandwidth For Fiber Amplifier

China High Power Optical Circulator Small Size Bandwidth For Fiber Amplifier on sale
...High Power Circulator Low insertion loss 780-1080 nm High Power Optical Circulator for Fiber Amplifier High Power Optical Circulator GEZHI high power optical circulator is designed for high power applications. It features small size, bandwidth, stable performance, wide temperaturerange,high isolation, low loss, low standing wave,high The characteristics of intermodulation and high power Features & Applications of High Power...
Gezhi Photonics (Shenzhen) Technology Co., Ltd.

Address: 504,A Bld.,YiQuan Industry Park,FuQian Road No.434, FuCheng Street, Shenzhen, China 518110

STAV58010P2 Gallium Nitride 50V, 10W, DC-6GHz RF Power Transistor

China STAV58010P2 Gallium Nitride 50V, 10W, DC-6GHz RF Power Transistor on sale
Gallium Nitride 50V, 16W, DC-6GHz RF Power Transistor Description The STAV58016P2 is a 16 watt, unmatched GaN HEMT, ideal for general applications up to 6GHz. It features high gain, wide band and low cost, in 4*4.5mm DFN plastic package. It can support CW......
Sanhuang electronics (Hong Kong) Co., Limited

Address: No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China

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