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| Categories | Integrated Circuit Components | 
|---|---|
| Brand Name: | Infineon | 
| Model Number: | IRF7420TRPBF | 
| Certification: | CE, GCF, ROHS | 
| Place of Origin: | China | 
| MOQ: | 1 | 
| Price: | Negotiable | 
| Payment Terms: | T/T, Western Union, | 
| Supply Ability: | 1000pcs per month | 
| Delivery Time: | 3-5 working days after received the payment | 
| Packaging Details: | Packed in original tray firstly ,then carton, at last Bubble bag for outer packing | 
| Function: | Step-Up, Step-Down | 
| Output Configuration: | Positive or Negative | 
| Topology: | Buck, Boost | 
| Output Type: | Adjustable | 
| Number of Outputs: | 1 | 
| Company Info. | 
| TOP Electronic Industry Co., Ltd. | 
| Verified Supplier | 
| View Contact Details | 
| Product List | 
Dual N+P Channel IRF7420TRPBF ±5.3A 20V SOIC-8 0.045Ω Rds(on) 1.8V Logic Level Fast Switching High Efficiency Power Management Space-Saving Design
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Applications
Power Management Modules (PMIC): Widely used in motherboards, servers, network communication equipment, and portable electronics as load switches, power path management, and switching transistors in DC-DC synchronous buck/boost converters. Its integrated design significantly saves PCB space.
Motor Drive and Control: Ideal for driving small to medium-power DC motors, such as in robotics, automated equipment, and precision instruments, where it enables compact H-bridge or half-bridge circuits for motor direction and speed control.
Battery-Powered Devices: Used in smartphones, tablets, TWS earphone charging cases, portable medical devices, and more for battery protection circuits, charge/discharge management, and load switching. Its logic-level gate threshold (1.8V drive) and low on-resistance make it highly suitable for low-voltage, high-efficiency applications.
Signal Switching & Multiplexing: Applicable for routing analog or digital signals in test equipment, audio interfaces, or data acquisition systems.
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
INFORMATION
Category  | ||
Mfr  | ||
Series  | ||
Packaging  | Tape & Reel (TR) Cut Tape (CT) Digi-Reel®  | |
Part Status  | Obsolete  | |
FET Type  | ||
Technology  | ||
Drain to Source Voltage (Vdss)  | 12 V  | |
Current - Continuous Drain (Id) @ 25°C  | ||
Drive Voltage (Max Rds On, Min Rds On)  | 1.8V, 4.5V  | |
Rds On (Max) @ Id, Vgs  | 14mOhm @ 11.5A, 4.5V  | |
Vgs(th) (Max) @ Id  | 900mV @ 250µA  | |
Gate Charge (Qg) (Max) @ Vgs  | 38 nC @ 4.5 V  | |
Vgs (Max)  | ±8V  | |
Input Capacitance (Ciss) (Max) @ Vds  | 3529 pF @ 10 V  | |
FET Feature  | -  | |
Power Dissipation (Max)  | 2.5W (Ta)  | |
Operating Temperature  | -55°C ~ 150°C (TJ)  | |
Grade  | -  | |
Qualification  | -  | |
Mounting Type  | Surface Mount  | |
Supplier Device Package  | 8-SO  | |
Package / Case  | ||
Base Product Number  | 
Drawing


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