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Categories Single, Pre-Biased Bipolar Transistors
DC Current Gain: 30@5mA,5V
Operating Temperature: -
Current - Collector(Ic): 100mA
Output Voltage(VO(on)): -
Input Resistor: 10kΩ
Number: 1 NPN (Pre-Biased)
Resistor Ratio: 1
Pd - Power Dissipation: 150mW
Collector - Emitter Voltage VCEO: 50V
Description: Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 100mA 150mW Surface Mount SOT-523
Mfr. Part #: DTC114EE
Model Number: DTC114EE
Package: SOT-523
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Slkor DTC114EE

Product Overview

This NPN silicon epitaxial planar digital transistor features built-in bias resistors, simplifying circuit design and reducing the quantity of parts and manufacturing processes. It is suitable for various digital applications.

Product Attributes

  • Brand: SLKORMICRO (implied by website)
  • Origin: Not specified
  • Material: Silicon Epitaxial Planar
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolMin.Typ.Max.UnitConditions
Collector Emitter VoltageVCEO--50V-
Input VoltageVI-10-40V-
Collector CurrentIC--100mA-
Power DissipationPtot--150mWTa = 25
Junction TemperatureTj--150-
Storage Temperature RangeTstg-55-150-
DC Current GainhFE30---VCE = 5 V, IC = 5 mA
Collector Base Cutoff CurrentICBO--500nAVCB = 50 V
Emitter Base Cutoff CurrentIEBO--0.88mAVEB = 5 V
Collector Emitter Saturation VoltageVCE(sat)--0.3VIC = 10 mA, IB = 0.5 mA
Input on VoltageVI(on)--3VVCE = 0.3 V, IC = 10 mA
Input off VoltageVI(off)0.5--VVCE = 5 V, IC = 100 A
Transition frequencyfT-250-MHzVCE = 10 V, -IE = 5 mA, f = 100 MHz
Input ResistanceR171013K-
Resistance RatioR2 / R10.811.2--

MARKING: DTC114EE


2201210930_Slkor-DTC114EE_C2965554.pdf

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