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CY7C2663KV18-450BZI IC SRAM 144MBIT PAR 165FBGA Infineon Technologies

CY7C2663KV18-450BZI IC SRAM 144MBIT PAR 165FBGA Infineon Technologies

CY7C2663KV18-450BZI IC SRAM 144MBIT PAR 165FBGA Infineon Technologies
CY7C2663KV18-450BZI IC SRAM 144MBIT PAR 165FBGA Infineon Technologies
Categories Flash Memory IC
Brand Name: Infineon Technologies
Model Number: CY7C2663KV18-450BZI
MOQ: 1
Price: Based on current price
Payment Terms: T/T
Supply Ability: In stock
Delivery Time: 3-5 work days
Packaging Details: anti-static bag & cardboard box
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II+
Memory Size: 144Mbit
Memory Organization: 8M x 18
Memory Interface: Parallel
Clock Frequency: 450 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (15x17)
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Company Info.
Sanhuang electronics (Hong Kong) Co., Limited
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CY7C2663KV18-450BZI IC SRAM 144MBIT PAR 165FBGA Infineon Technologies

Product Details


Functional Description

The CY7C266 is a high-performance 8192-word by 8-bit CMOS PROM. When deselected, the CY7C266 automatically powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms.

Features

• CMOS for optimum speed/power
• Windowed for reprogrammability
• High speed
— 20 ns (Commercial)
• Low power
— 660 mW (Commercial)
• Super low standby power
— Less than 85 mW when deselected
• EPROM technology 100% programmable
• 5V ±10% VCC, commercial and military
• TTL-compatible I/O
• Direct replacement for 27C64 EPROMs

Specifications

AttributeAttribute Value
ManufacturerCypress Semiconductor
Product CategoryMemory ICs
SeriesCY7C2663KV18
TypeSynchronous
PackagingTray
Mounting-StyleSMD/SMT
Package-Case165-LBGA
Operating-Temperature-40°C ~ 85°C (TA)
InterfaceParallel
Voltage-Supply1.7 V ~ 1.9 V
Supplier-Device-Package165-FBGA (15x17)
Memory Capacity144M (8M x 18)
Memory-TypeSRAM - Synchronous, QDR II+
Speed450MHz
Access-Time0.45 ns
Format-MemoryRAM
Maximum Operating Temperature+ 85 C
Operating temperature range- 40 C
Interface-TypeParallel
Organization8 M x 18
Supply-Current-Max940 mA
Supply-Voltage-Max1.9 V
Supply-Voltage-Min1.7 V
Package-CaseFBGA-165
Maximum-Clock-Frequency450 MHz

Descriptions

SRAM - Synchronous, QDR II+ Memory IC 144Mb (8M x 18) Parallel 450MHz 165-FBGA (15x17)
SRAM Chip Sync Dual 1.8V 144M-Bit 8M x 18 0.45ns 165-Pin FBGA Tray
SRAM 144Mb 1.8V 450Mhz 8M x 18 QDR II SRAM
Quality CY7C2663KV18-450BZI IC SRAM 144MBIT PAR 165FBGA Infineon Technologies for sale

CY7C2663KV18-450BZI IC SRAM 144MBIT PAR 165FBGA Infineon Technologies

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