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IRF7240TRPBF Power Mosfet Transistor high power mosfet transistors

Categories Power Management ICs
Model Number: IRF7240TRPBF
Certification: new & original
Place of Origin: original factory
MOQ: 20pcs
Price: Negotiate
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 8600pcs
Delivery Time: 1 day
Packaging Details: Please contact me for details
Description: MOSFET P-CH 40V 10.5A 8SO
Drain- Source Voltage: -40 V
Continuous Drain Current: -10.5 A
Pulsed Drain Current: -43 A
Power Dissipation: 2.5 W
Linear Derating Factor: 20 mW/°C
Gate-to-Source Voltage: ± 20 V
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IRF7240TRPBF Power Mosfet Transistor high power mosfet transistors


Stock Offer (Hot Sell)

Part no.QuantityBrandD/CPackage
NDT456P5000FAIRCHILD16+SOP8
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P2003EVG5000NIKOS13+SOP8
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SN74AHC123ADR5000TI15+SOP-16
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SN74HC148N TI 04015000TI16+SOP-16
ST232ABDR5000ST14+SMD
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STM8S103F2P65000ST14+SSOP
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STU309D5000SAMHOP13+SOT-252

IRF7240PbF

HEXFET Power MOSFET


  • Ultra Low On-Resistance
  • P-Channel MOSFET
  • Surface Mount
  • Available in Tape & Reel
  • Lead-Free

VDSSRDS(on) maxID
-40V0.015@VGS = -10V-10.5A
0.025@VGS = -4.5V-8.4A

Description

These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications..


The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique


Absolute Maximum Ratings

ParameterMax.Units
VDSDrain- Source Voltage-40V
ID @ TA = 25°CContinuous Drain Current, VGS @ -10V-10.5A
ID @ TA= 70°CContinuous Drain Current, VGS @ -10V-8.6A
IDMPulsed Drain Current-43A
PD @TA = 25°CPower Dissipation2.5W
PD @TA = 70°CPower Dissipation1.6W
Linear Derating Factor20mW/°C
VGSGate-to-Source Voltage± 20V
TJ, TSTGJunction and Storage Temperature Range-55 to + 150°C

SO-8 Package Outline


Dimensions are shown in millimeters (inches)


SO-8 Part Marking


EXAMPLE: THIS IS AN IRF7101 (MOSFET)


SO-8 Tape and Reel


Dimensions are shown in millimeters (inches)


Quality IRF7240TRPBF Power Mosfet Transistor high power mosfet transistors for sale
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