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IPB60R190P6ATMA1

IPB60R190P6ATMA1
Categories MOSFET
Transistor Polarity :: N-Channel
Technology :: Si
Id - Continuous Drain Current :: 20.2 A
Mounting Style :: SMD/SMT
Tradename :: CoolMOS
Minimum Operating Temperature :: - 55 C
Package / Case :: TO-263-3
Maximum Operating Temperature :: + 150 C
Channel Mode :: Enhancement
Vds - Drain-Source Breakdown Voltage :: 600 V
Packaging :: Reel
Vgs th - Gate-Source Threshold Voltage :: 3.5 V
Product Category :: MOSFET
Rds On - Drain-Source Resistance :: 445 mOhms
Vgs - Gate-Source Voltage :: 20 V
Qg - Gate Charge :: 37 nC
Manufacturer :: Infineon Technologies
Description: MOSFET HIGH POWER_LEGACY
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IPB60R190P6ATMA1

The IPB60R190P6ATMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

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