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IPB100N06S3-03

Categories MOSFET
Product Category :: MOSFET
Vgs (Max) :: ±20V
Current - Continuous Drain (Id) @ 25°C :: 100A (Tc)
FET Type :: N-Channel
Mounting Type :: Surface Mount
Gate Charge (Qg) (Max) @ Vgs :: 480nC @ 10V
Manufacturer :: Infineon Technologies
Minimum Quantity :: 1000
Drive Voltage (Max Rds On, Min Rds On) :: 10V
Operating Temperature :: -55°C ~ 175°C (TJ)
FET Feature :: -
Series :: OptiMOS™
Input Capacitance (Ciss) (Max) @ Vds :: 21620pF @ 25V
Supplier Device Package :: PG-TO263-3-2
Part Status :: Obsolete
Packaging :: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs :: 3 mOhm @ 80A, 10V
Power Dissipation (Max) :: 300W (Tc)
Package / Case :: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology :: MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id :: 4V @ 230µA
Drain to Source Voltage (Vdss) :: 55V
Description: MOSFET N-CH 55V 100A D2PAK
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IPB100N06S3-03

The IPB100N06S3-03,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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