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IXYX30N170CV1

IXYX30N170CV1
Categories IGBT Transistors
Gate-Emitter Leakage Current :: 100 nA
Product Category :: IGBT Transistors
Mounting Style :: Through Hole
Continuous Collector Current at 25 C :: 108 A
Pd - Power Dissipation :: 937 W
Collector- Emitter Voltage VCEO Max :: 1700 V
Package / Case :: PLUS247-3
Maximum Operating Temperature :: + 175 C
Maximum Gate Emitter Voltage :: +/- 20 V
Packaging :: Tube
Configuration :: Single
Collector-Emitter Saturation Voltage :: 3 V
Manufacturer :: IXYS
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IXYX30N170CV1

The IXYX30N170CV1,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

AT93C46A-10SC

  

SA5534DR

  

AT93C46-10SC

  
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