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| Categories | N Mosfet Transistor |
|---|---|
| Place of Origin: | US |
| Brand Name: | Original |
| Model Number: | 2SD1047 |
| Package Type: | TO-3P |
| Brand: | TRANS NPN 140V 12A TO-3P |
| Current - Collector (Ic) (Max): | 12A |
| Voltage - Collector Emitter Breakdown (Max): | 140V |
| Vce Saturation (Max) @ Ib, Ic: | 700mV @ 700mA, 7A |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 1A, 5V |
| Power - Max: | 100W |
| Frequency - Transition: | 20MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-3P-3, SC-65-3 |
| Type: | Bipolar Junction Transistor |
| Shipment method: | DHL/UPS/Fedex/etc |
| Payment: | Acceptable |
| Stock: | In Stock |
| Supply Ability: | 859000PCS/Day |
| Packaging Details: | Box/Reel/Tube |
| Port: | Shenzhen/Hongkong/Guangzhou |
| MOQ: | 10 |
| Price: | $0.01 - $0.10 / Piece |
| Delivery Time: | 1-7 days |
| Payment Terms: | T/T, Western Union, Paypal,Alibaba trade order |
High power NPN epitaxial planar bipolar transistor d1047 b817
Product Description
Description
The device is a NPN transistor manufactured using new BiT-LA
(Bipolar transistor for linear amplifier) technology. The resulting
transistor
shows good gain linearity behaviour.
Features
- High breakdown voltage VCEO = 140 V
- Typical ft = 20 MHz
- Fully characterized at 125 oC
Product Category: Bipolar Transistors
Mounting Style: Through Hole
Package / Case: TO-3P-3
Transistor Polarity: NPN
Collector- Emitter Voltage VCEO Max: 140 V
Emitter- Base Voltage VEBO: 6 V
Gain Bandwidth Product fT: 20 MHz
Series: 500V Transistors
Packaging: Tube
Continuous Collector Current: 12 A
DC Collector/Base Gain hfe Min: 50
Pd - Power Dissipation: 100 W
Application
- Power supply
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