Name: 1N4942 THRU 1N4948 High Speed Switching Diode IAV 10Amp High Voltage Capability
Brand: Hua Xuan Yang
Price: 1 USD

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1N4942 THRU 1N4948 High Speed Switching Diode I(AV) 1.0Amp High Voltage Capability

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

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1N4942 THRU 1N4948 FAST RECOVERY RECTIFIERS Reverse Voltage - 200 to 1000 Volts Forward Current - 1.0 Ampere

FEATURES

Ultrafast Recovery Times
High Voltage Capability
Low Reverse Leakage Current
The plastic package carries Underwriters Laboratory Flammability Classification 94V-0
Fast switching for high efficiency Low reverse leakage
High forward surge current capability High temperature soldering guaranteed:
250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension

MECHANICAL DATA

Case: JEDEC DO-41 molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight:0.012 ounce, 0.33 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number	SYMBOLS	1N 4942	1N 4944	1N 4946	1N 4947	1N 4948	UNITS
Maximum repetitive peak reverse voltage	VRRM	200	400	600	800	1000	VOLTS
Maximum RMS voltage	VRMS	140	280	420	560	700	VOLTS
Maximum DC blocking voltage	VDC	200	400	600	800	1000	VOLTS
Maximum average forward rectified current 0.375” (9.5mm) lead length at TA =75 C	I(AV)	1.0					Amp
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)	IFSM	30.0					Amps
Maximum instantaneous forward voltage at 1.0A	VF	1.3					Volts
Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C	IR	5.0 50.0					mA
Maximum reverse recovery time (NOTE 1)	trr	150		250		500	ns
Typical junction capacitance (NOTE 2)	CJ	15.0					pF
Typical thermal resistance (NOTE 3)	RqJA	50.0					C/W
Operating junction and storage temperature range	TJ,TSTG	-65 to +150					C

Note:

1. Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A

2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

3. Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

RATINGS AND CHARACTERISTIC CURVES 1N4942 THRU 1N4948

Product Tags:

high voltage switching diode

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