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| Categories | Mosfet Power Transistor |
|---|---|
| Brand Name: | Hua Xuan Yang |
| Model Number: | AP2308GEN |
| Certification: | RoHS、SGS |
| Place of Origin: | China |
| MOQ: | Negotiable |
| Price: | Negotiable |
| Payment Terms: | L/C T/T Western Union |
| Supply Ability: | 10,000/Month |
| Delivery Time: | 4~5 week |
| Packaging Details: | Boxed |
| Model Number:: | AP2308GEN |
| Condition:: | New and original |
| Type:: | Drive IC |
| Application:: | Electronic Products |
| D/C:: | NEW |
| Datasheet:: | Pls contact us |
Electronic Component AP2308GEN SOT-23 Advantage Price For Original Stock
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost- effectiveness device.
The SOT-23S package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 20 | V |
| VGS | Gate-Source Voltage | +8 | V |
| ID@TA=25℃ | Drain Current3, VGS @ 4.5V | 1.2 | A |
| ID@TA=70℃ | Drain Current3, VGS @ 4.5V | 1 | A |
| IDM | Pulsed Drain Current1 | 3.6 | A |
| PD@TA=25℃ | Total Power Dissipation | 0.69 | W |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
Thermal Data
| Symbol | Parameter | Value | Unit |
| Rthj-a | Maximum Thermal Resistance, Junction-ambient3 | 180 | ℃/W |
AP2308GE
Electrical Characteristics@Tj=25oC(unless otherwise specified)
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 20 | - | - | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V, ID=1.2A | - | - | 600 | mΩ |
| VGS=2.5V, ID=0.3A | - | - | 2 | Ω | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250uA | 0.5 | - | 1.25 | V |
| gfs | Forward Transconductance | VDS=5V, ID=1.2A | - | 1 | - | S |
| IDSS | Drain-Source Leakage Current | VDS=20V, VGS=0V | - | - | 1 | uA |
| IGSS | Gate-Source Leakage | VGS=+8V, VDS=0V | - | - | +30 | uA |
| Qg | Total Gate Charge | ID=1.2A VDS=16V VGS=4.5V | - | 1.2 | 2 | nC |
| Qgs | Gate-Source Charge | - | 0.4 | - | nC | |
| Qgd | Gate-Drain ("Miller") Charge | - | 0.3 | - | nC | |
| td(on) | Turn-on Delay Time | VDS=10V ID=1.2A RG=3.3Ω VGS=5V | - | 17 | - | ns |
| tr | Rise Time | - | 36 | - | ns | |
| td(off) | Turn-off Delay Time | - | 76 | - | ns | |
| tf | Fall Time | - | 73 | - | ns | |
| Ciss | Input Capacitance | VGS=0V .VDS=10V f=1.0MHz | - | 37 | 60 | pF |
| Coss | Output Capacitance | - | 17 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 13 | - | pF |
Source-Drain Diode
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| VSD | Forward On Voltage2 | IS=1.2A, VGS=0V | - | - | 1.2 | V |
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10s ; 400℃/W when mounted on min. copper pad.
Items:New AP2308GEN
Part number: AP2308GEN
Package: Electronic components
Electronic Components: AP2308GEN
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